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Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660

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Reference TypeJournal (article/letter/editorial)
TitleErratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]
JournalApplied Physics Letters
AuthorsMeakin, D.Author
Stobbs, M.Author
Stoemenos, J.Author
Economou, N. A.Author
Year1988 (April 25)Volume52
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99660Search in ResearchGate
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Mindat Ref. ID8482875Long-form Identifiermindat:1:5:8482875:6
GUID0
Full ReferenceMeakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
Plain TextMeakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
In(1988, April) Applied Physics Letters Vol. 52 (17) AIP Publishing

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Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (13). 1053-1055 doi:10.1063/1.99208
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1797 (1988)]. Applied Physics Letters, 52 (24). 2061-2063 doi:10.1063/1.99663
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Meakin, D., Stoemenos, J., Migliorato, P., Economou, N. A. (1987) Structural studies of low‐temperature low‐pressure chemical deposited polycrystalline silicon. Journal of Applied Physics, 61 (11). 5031-5037 doi:10.1063/1.338325
Ishida, Makoto, Katakabe, Ichiro, Nakamura, Tetsuro, Ohtake, Norio (1988) Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (16). 1326-1328 doi:10.1063/1.99685
Miura, S., Yoshitake, T., Satoh, T., Miyasaka, Y., Shohata, N. (1988) Erratum: Structure and superconducting properties of Y1Ba2Cu3O7−σ films prepared by transversely excited atmospheric pressure CO2 pulsed laser evaporation [Appl. Phys. Lett. 52, 1008 (1988)]. Applied Physics Letters, 52 (24). 2090 doi:10.1063/1.99664
Xu, Jingming, Shur, Michael (1988) Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)]. Applied Physics Letters, 53 (13). 1219 doi:10.1063/1.100422
Shigeta, Y. (1990) Erratum: Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Si (111) [Appl. Phys. Lett. 52, 619 (1988)]. Applied Physics Letters, 56 (3). 301 doi:10.1063/1.103338
Houle, F. A. (1988) Erratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Applied Physics Letters, 52 (6). 515 doi:10.1063/1.99659
Ahmed, W., Meakin, D. B., Stoemenos, J., Economou, N. A., Pilkington, R. D. (1992) Ultra-low pressure chemical vapour deposition of polycrystalline and amorphous silicon. Journal of Materials Science, 27. 479-484 doi:10.1007/bf00543941
Razeghi, M., Omnes, F., Defour, M., Maurel, Ph. (1988) High‐quality GaInAsP/InP heterostructures grown by low‐pressure metalorganic chemical vapor deposition on silicon substrates. Applied Physics Letters, 52 (3). 209-211 doi:10.1063/1.99521
 
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