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Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792

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Reference TypeJournal (article/letter/editorial)
TitleComment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]
JournalApplied Physics Letters
AuthorsPelletier, J.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99792Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484529Long-form Identifiermindat:1:5:8484529:4
GUID0
Full ReferencePelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Plain TextPelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett.53, 1665 (1988)]. Applied Physics Letters, 53 (17). 1666-1667 doi:10.1063/1.99793
Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Low‐temperature reactive ion etching and microwave plasma etching of silicon. Applied Physics Letters, 52 (8). 616-618 doi:10.1063/1.99382
Houle, F. A. (1988) Erratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Applied Physics Letters, 52 (6). 515 doi:10.1063/1.99659
Guidotti, Daniel, Hovel, Harold J. (1988) Comment on ‘‘Laser‐induced degradation of GaAs photoluminescence’’ [Appl. Phys. Lett.52, 625 (1988)]. Applied Physics Letters, 53 (10). 927 doi:10.1063/1.100072
Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
Landauer, Rolf (1988) Response to ‘‘Comment on ‘Energy requirements in communication’ ’’ [Appl. Phys. Lett.52, 2191 (1988)]. Applied Physics Letters, 52 (25). 2191-2192 doi:10.1063/1.99532
Cooke, M. J., Pelletier, J. (1988) Self‐biasing effects on plasma etching characteristics of Si and SiO2. Applied Physics Letters, 53 (1). 19-21 doi:10.1063/1.100567
People, R. (1988) Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]. Applied Physics Letters, 53 (12). 1127 doi:10.1063/1.100035
Eser, E., Urbanski, E. (1988) Response to ‘‘Comment on ‘Photodegradation in hydrogenated amorphous silicon films at a high level of illumination’ ’’ [Appl. Phys. Lett.53, 1768 (1988)]. Applied Physics Letters, 53 (18). 1769 doi:10.1063/1.99778
Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Pelletier, J., Arnal, Y., Joubert, O. (1988) Etching mechanisms of polymers in oxygen microwave multipolar plasmas. Applied Physics Letters, 53 (20). 1914-1916 doi:10.1063/1.100343
 
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