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Pelletier, J., Arnal, Y., Joubert, O. (1988) Etching mechanisms of polymers in oxygen microwave multipolar plasmas. Applied Physics Letters, 53 (20). 1914-1916 doi:10.1063/1.100343

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Reference TypeJournal (article/letter/editorial)
TitleEtching mechanisms of polymers in oxygen microwave multipolar plasmas
JournalApplied Physics Letters
AuthorsPelletier, J.Author
Arnal, Y.Author
Joubert, O.Author
Year1988 (November 14)Volume53
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.100343Search in ResearchGate
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Mindat Ref. ID8484818Long-form Identifiermindat:1:5:8484818:5
GUID0
Full ReferencePelletier, J., Arnal, Y., Joubert, O. (1988) Etching mechanisms of polymers in oxygen microwave multipolar plasmas. Applied Physics Letters, 53 (20). 1914-1916 doi:10.1063/1.100343
Plain TextPelletier, J., Arnal, Y., Joubert, O. (1988) Etching mechanisms of polymers in oxygen microwave multipolar plasmas. Applied Physics Letters, 53 (20). 1914-1916 doi:10.1063/1.100343
In(1988, November) Applied Physics Letters Vol. 53 (20) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Joubert, O., Pelletier, J., Arnal, Y. (1989) The etching of polymers in oxygen‐based plasmas: A parametric study. Journal of Applied Physics, 65 (12). 5096-5100 doi:10.1063/1.343186
Joubert, O., Paniez, P., Pelletier, J., Pons, M. (1991) Etching of polymers by oxygen plasmas: Influence of viscoelastic properties. Applied Physics Letters, 58 (9). 959-961 doi:10.1063/1.104455
Pelletier, J, Arnal, Y, Petit, B, Pomot, C, Pichot, M (1986) Microwave multipolar plasmas: a possible solution for etching in microelectronics?. Journal of Physics D: Applied Physics, 19. 795-809 doi:10.1088/0022-3727/19/5/012
Durandet, A., Arnal, Y., Pelletier, J., Pomot, C. (1990) Anisotropy and kinetics of the etching of tungsten in SF6 multipolar microwave plasma. Journal of Applied Physics, 67 (5). 2298-2302 doi:10.1063/1.345524
Pichot, M., Durandet, A., Pelletier, J., Arnal, Y., Vallier, L. (1988) Microwave multipolar plasmas excited by distributed electron cyclotron resonance: Concept and performance. Review of Scientific Instruments, 59 (7). 1072-1075 doi:10.1063/1.1139728
Joubert, O., Pelletier, J., Fiori, C., Nguyen Tan, T. A. (1990) Surface mechanisms in O2and SF6microwave plasma etching of polymers. Journal of Applied Physics, 67 (9). 4291-4296 doi:10.1063/1.344944
Arnal, Y., Pelletier, J., Pomot, C., Petit, B., Durandet, A. (1984) Plasma etching in magnetic multipole microwave discharge. Applied Physics Letters, 45 (2). 132-134 doi:10.1063/1.95143
Petit, B., Pelletier, J. (1987) A Parametric Study of the Etching of Silicon in SF6Microwave Multipolar Plasmas: Interpretation of Etching Mechanisms. Japanese Journal of Applied Physics, 26. 825-834 doi:10.1143/jjap.26.825
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Pons, Michel, Pelletier, Jacques, Joubert, Olivier (1994) Anisotropic etching of polymers in SO2/O2plasmas: Hypotheses on surface mechanisms. Journal of Applied Physics, 75 (9). 4709-4715 doi:10.1063/1.355924
Pons, M., Joubert, O., Paniez, P., Pelletier, J. (1991) Plasma etching of polymers: A reinvestigation of temperature effects. Journal of Applied Physics, 70 (4). 2376-2379 doi:10.1063/1.349439
 
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