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Houle, F. A. (1988) Erratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Applied Physics Letters, 52 (6). 515 doi:10.1063/1.99659

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Reference TypeJournal (article/letter/editorial)
TitleErratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]
JournalApplied Physics Letters
AuthorsHoule, F. A.Author
Year1988 (February 8)Volume52
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.99659Search in ResearchGate
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Mindat Ref. ID8483764Long-form Identifiermindat:1:5:8483764:8
GUID0
Full ReferenceHoule, F. A. (1988) Erratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Applied Physics Letters, 52 (6). 515 doi:10.1063/1.99659
Plain TextHoule, F. A. (1988) Erratum: On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2 [Appl. Phys. Lett. 50, 1838 (1987)]. Applied Physics Letters, 52 (6). 515 doi:10.1063/1.99659
In(1988, February) Applied Physics Letters Vol. 52 (6) AIP Publishing

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Houle, F. A. (1987) On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2. Applied Physics Letters, 50 (25). 1838-1840 doi:10.1063/1.97713
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Houle, F. A. (1987) Dynamics of SiF4 desorption during etching of silicon by XeF2. The Journal of Chemical Physics, 87 (3). 1866-1872 doi:10.1063/1.453201
Irene, E. A., Lewis, E. A. (1988) Erratum: Thermionic emission model for the initial regime of silicon oxidation [Appl. Phys. Lett. 51, 767 (1987)]. Applied Physics Letters, 52 (2). 169 doi:10.1063/1.99661
Hoyt, J. L., Crabbé, E., Gibbons, J. F., Pease, R. F. W. (1987) Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]. Applied Physics Letters, 50 (25). 1846 doi:10.1063/1.98271
Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett.53, 1665 (1988)]. Applied Physics Letters, 53 (17). 1666-1667 doi:10.1063/1.99793
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1797 (1988)]. Applied Physics Letters, 52 (24). 2061-2063 doi:10.1063/1.99663
d’Heurle, F. M., Thomas, O. (1988) Comment on ‘‘Evidence for Si diffusion through epitaxial NiSi2grown on Si(111)’’ [Appl. Phys. Lett.50, 1257 (1987)]. Applied Physics Letters, 52 (26). 2269 doi:10.1063/1.99772
Porod, Wolfgang (1988) Comment on ‘‘Energy requirements in communication’’ [Appl. Phys. Lett.51, 2056 (1987)]. Applied Physics Letters, 52 (25). 2191 doi:10.1063/1.99531
Hsu, S. C., Kwok, H. S. (1988) Erratum: Picosecond carrier recombination dynamics of semiconductor‐doped glasses [Appl. Phys. Lett.50, 1782 (1987)]. Applied Physics Letters, 53 (18). 1770 doi:10.1063/1.100424
 
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