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Ishida, Makoto, Katakabe, Ichiro, Nakamura, Tetsuro, Ohtake, Norio (1988) Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (16). 1326-1328 doi:10.1063/1.99685

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Al2O3films on Si by low‐pressure chemical vapor deposition
JournalApplied Physics Letters
AuthorsIshida, MakotoAuthor
Katakabe, IchiroAuthor
Nakamura, TetsuroAuthor
Ohtake, NorioAuthor
Year1988 (April 18)Volume52
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99685Search in ResearchGate
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Mindat Ref. ID8482823Long-form Identifiermindat:1:5:8482823:3
GUID0
Full ReferenceIshida, Makoto, Katakabe, Ichiro, Nakamura, Tetsuro, Ohtake, Norio (1988) Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (16). 1326-1328 doi:10.1063/1.99685
Plain TextIshida, Makoto, Katakabe, Ichiro, Nakamura, Tetsuro, Ohtake, Norio (1988) Epitaxial Al2O3films on Si by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (16). 1326-1328 doi:10.1063/1.99685
In(1988, April) Applied Physics Letters Vol. 52 (16) AIP Publishing

See Also

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Sawada, Kazuaki, Ishida, Makoto, Nakamura, Tetsuro, Ohtake, Norio (1988) Metalorganic molecular beam epitaxy of γ‐Al2O3films on Si at low growth temperatures. Applied Physics Letters, 52 (20). 1672-1674 doi:10.1063/1.99709
Sawada, Kazuaki, Ishida, Makoto, Nakamura, Tetsuro, Suzaki, Tetso (1989) Selective epitaxial growth of Si on sapphire using electron beam irradiation. Applied Physics Letters, 55 (16). 1636-1638 doi:10.1063/1.102222
Kimura, Takayuki, Yaginuma, Hideki, Sengoku, Atsuhiro, Moriyasu, Yoshitaka, Ishida, Makoto (1998) Epitaxial Si on Al2O3Films Grown with O2Gas by the Ultrahigh-Vacuum Chemical Vapor Deposition Method. Japanese Journal of Applied Physics, 37. 1285-1288 doi:10.1143/jjap.37.1285
Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition. Applied Physics Letters, 52 (13). 1053-1055 doi:10.1063/1.99208
Meakin, D., Stobbs, M., Stoemenos, J., Economou, N. A. (1988) Erratum: Low‐temperature epitaxial growth of silicon by low‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1053 (1988)]. Applied Physics Letters, 52 (17). 1389-1391 doi:10.1063/1.99660
Ishida, M., Tanaka, H., Sawada, K., Namiki, A., Nakamura, T., Ohtake, N. (1988) Deposition of a Si monolayer on sapphire using an ArF excimer laser for Si epitaxial growth. Journal of Applied Physics, 64 (4). 2087-2091 doi:10.1063/1.341717
Ishida, Makoto, Sawada, Kazuaki, Yamaguchi, Shinsuke, Nakamura, Tetsuro, Suzaki, Tetsuo (1989) Heteroepitaxial Si/Al2O3/Si structures. Applied Physics Letters, 55 (6). 556-558 doi:10.1063/1.102434
Fujiwara, Y., Sakuma, E., Misawa, S., Endo, K., Yoshida, S. (1986) Epitaxial growth of 3C‐SiC on Si by low‐pressure chemical vapor deposition. Applied Physics Letters, 49 (7). 388-390 doi:10.1063/1.97596
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 52 (21). 1797-1799 doi:10.1063/1.99629
Yew, Tri‐Rung, O, Kenneth, Reif, Rafael (1988) Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition [Appl. Phys. Lett.52, 1797 (1988)]. Applied Physics Letters, 52 (24). 2061-2063 doi:10.1063/1.99663
Hayama, Kiyoteru, Ishida, Makoto, Nakamura, Tetsuro (1994) Effect of Oxygen Radicals for Epitaxial Growth ofAl2O3on Si. Japanese Journal of Applied Physics, 33. 496-499 doi:10.1143/jjap.33.496
 
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