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Holmén, G., Linnros, J., Svensson, B. (1984) Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon. Applied Physics Letters, 45 (10). 1116-1118 doi:10.1063/1.95037

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon
JournalApplied Physics Letters
AuthorsHolmén, G.Author
Linnros, J.Author
Svensson, B.Author
Year1984 (November 15)Volume45
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.95037Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8474047Long-form Identifiermindat:1:5:8474047:6
GUID0
Full ReferenceHolmén, G., Linnros, J., Svensson, B. (1984) Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon. Applied Physics Letters, 45 (10). 1116-1118 doi:10.1063/1.95037
Plain TextHolmén, G., Linnros, J., Svensson, B. (1984) Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon. Applied Physics Letters, 45 (10). 1116-1118 doi:10.1063/1.95037
In(1984, November) Applied Physics Letters Vol. 45 (10) AIP Publishing

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Linnros, J., Svensson, B., Holmén, G. (1984) Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire. Physical Review B, 30 (7) 3629-3638 doi:10.1103/physrevb.30.3629
Svensson, B., Linnros, J., Holmén, G. (1983) Ion-beam induced annealing of radiation damage in silicon on sapphire. Nuclear Instruments and Methods in Physics Research, 209. 755-760 doi:10.1016/0167-5087(83)90879-7
Linnros, J., Holmén, G., Svensson, B. (1985) Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition. Physical Review B, 32 (5) 2770-2777 doi:10.1103/physrevb.32.2770
Svensson, B. G., Linnros, J. T., Holmén, G. (1990) Boron implantation in silicon: Isotope effects studied by secondary ion mass spectrometry. Journal of Applied Physics, 68 (1). 73-77 doi:10.1063/1.347097
Linnros, J., Holmén, G. (1986) Channeling dependence of ion‐beam‐induced epitaxial recrystallization in silicon. Journal of Applied Physics, 59 (5). 1513-1517 doi:10.1063/1.336457
Holmén, G., Linnros, J. (1987) Growth and crystallization of amorphous layers in silicon resulting from energetic ion bombardment. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 22 (4). 520-523 doi:10.1016/0168-583x(87)90153-4
Alestig, G., Holmén, G., Linnros, J. (1987) Electrical properties of ion beam recrystallized and laser beam annealed arsenic‐implanted silicon on sapphire. Journal of Applied Physics, 62 (2). 409-413 doi:10.1063/1.339812
Linnros, J., Holmén, G. (1987) Dose rate dependence and time constant of the ion‐beam‐induced crystallization mechanism in silicon. Journal of Applied Physics, 62 (12). 4737-4744 doi:10.1063/1.339027
Elliman, R. G., Jacobson, D. C., Linnros, J., Poate, J. M. (1987) Ion‐beam‐induced epitaxy and interfacial segregation of Au in amorphous silicon. Applied Physics Letters, 51 (5). 314-316 doi:10.1063/1.98454
Holmén, G., Peterström, S., Alestig, G. (1984) Preheated cw laser annealed transistors in silicon on sapphire. Applied Physics Letters, 45 (7). 741-743 doi:10.1063/1.95382
Svensson, B., Holmén, G., Linnros, J. (1982) Electron emission from silver under heavy atomic and molecular ion bombardment. Nuclear Instruments and Methods in Physics Research, 194 (1). 429-432 doi:10.1016/0029-554x(82)90558-4
 
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