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Holmén, G., Peterström, S., Alestig, G. (1984) Preheated cw laser annealed transistors in silicon on sapphire. Applied Physics Letters, 45 (7). 741-743 doi:10.1063/1.95382

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Reference TypeJournal (article/letter/editorial)
TitlePreheated cw laser annealed transistors in silicon on sapphire
JournalApplied Physics Letters
AuthorsHolmén, G.Author
Peterström, S.Author
Alestig, G.Author
Year1984 (October)Volume45
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.95382Search in ResearchGate
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Mindat Ref. ID8474757Long-form Identifiermindat:1:5:8474757:6
GUID0
Full ReferenceHolmén, G., Peterström, S., Alestig, G. (1984) Preheated cw laser annealed transistors in silicon on sapphire. Applied Physics Letters, 45 (7). 741-743 doi:10.1063/1.95382
Plain TextHolmén, G., Peterström, S., Alestig, G. (1984) Preheated cw laser annealed transistors in silicon on sapphire. Applied Physics Letters, 45 (7). 741-743 doi:10.1063/1.95382
In(1984, October) Applied Physics Letters Vol. 45 (7) AIP Publishing

See Also

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Alestig, G., Holmén, G. (1984) Experiments on the temperature rise in cw‐laser‐irradiated silicon on sapphire. Journal of Applied Physics, 56 (7). 2161-2163 doi:10.1063/1.334216
Alestig, G., Holmén, G., Linnros, J. (1987) Electrical properties of ion beam recrystallized and laser beam annealed arsenic‐implanted silicon on sapphire. Journal of Applied Physics, 62 (2). 409-413 doi:10.1063/1.339812
Eklund, K. H., Holmén, G., Peterström, S. (1974) Ion implantation in silicon films on sapphire. Applied Physics Letters, 24 (6). 283-284 doi:10.1063/1.1655184
Peterström, S, Holmén, G (1981) CMOS-Transistors in Silicon on Sapphire. Physica Scripta, 24 (2). 422-426 doi:10.1088/0031-8949/24/2/017
Peterström, S, Holmén, G (1980) Ion Implanted Devices in Silicon on Sapphire. Physica Scripta, 22 (3). 308-313 doi:10.1088/0031-8949/22/3/016
Alestig, G., Holmén, G. (1987) Laser annealing of silicon on sapphire ion implanted at elevated temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 22 (4). 536-540 doi:10.1016/0168-583x(87)90157-1
Peterström, S. (1991) Double solid phase epitaxy of germanium‐implanted silicon on sapphire. Applied Physics Letters, 58 (25). 2927-2929 doi:10.1063/1.104724
Chantre, A., Kechouane, M., Auvert, G., Bois, D. (1983) Influence of scan speed on deep level defects in cw laser annealed silicon. Applied Physics Letters, 43 (1). 98-100 doi:10.1063/1.94136
Holmén, G., Linnros, J., Svensson, B. (1984) Influence of energy transfer in nuclear collisions on the ion beam annealing of amorphous layers in silicon. Applied Physics Letters, 45 (10). 1116-1118 doi:10.1063/1.95037
Bean, J. C. (1980) Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy. Applied Physics Letters, 36 (9). 741-743 doi:10.1063/1.91634
Murakami, Kouichi, Itoh, Hisayoshi, Takita, Kôki, Masuda, Kohzoh (1984) Substitutional nitrogen impurities in pulsed‐laser annealed silicon. Applied Physics Letters, 45 (2). 176-178 doi:10.1063/1.95160
 
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