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Sai‐Halasz, G. A., Gazecki, G. (1984) Influence of an electric field on beam‐induced adhesion enhancement. Applied Physics Letters, 45 (10). 1067-1069 doi:10.1063/1.95071

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of an electric field on beam‐induced adhesion enhancement
JournalApplied Physics Letters
AuthorsSai‐Halasz, G. A.Author
Gazecki, G.Author
Year1984 (November 15)Volume45
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.95071Search in ResearchGate
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Mindat Ref. ID8474114Long-form Identifiermindat:1:5:8474114:7
GUID0
Full ReferenceSai‐Halasz, G. A., Gazecki, G. (1984) Influence of an electric field on beam‐induced adhesion enhancement. Applied Physics Letters, 45 (10). 1067-1069 doi:10.1063/1.95071
Plain TextSai‐Halasz, G. A., Gazecki, G. (1984) Influence of an electric field on beam‐induced adhesion enhancement. Applied Physics Letters, 45 (10). 1067-1069 doi:10.1063/1.95071
In(1984, November) Applied Physics Letters Vol. 45 (10) AIP Publishing

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Mitchell, I. V., Nyberg, G., Elliman, R. G. (1984) Enhancement of thin metallic film adhesion following vacuum ultraviolet irradiation. Applied Physics Letters, 45 (2). 137-139 doi:10.1063/1.95144
Sakaki, H., Chang, L. L., Ludeke, R., Chang, Chin‐An, Sai‐Halasz, G. A., Esaki, L. (1977) In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy. Applied Physics Letters, 31 (3). 211-213 doi:10.1063/1.89609
Kawai, N. J., Chang, L. L., Sai‐Halasz, G. A., Chang, C.‐A., Esaki, L. (1980) Magnetic field‐induced semimetal‐to‐semiconductor transition in InAs‐GaSb superlattices. Applied Physics Letters, 36 (5). 369-371 doi:10.1063/1.91490
Sai‐Halasz, G. A., Tsu, R., Esaki, L. (1977) A new semiconductor superlattice. Applied Physics Letters, 30 (12). 651-653 doi:10.1063/1.89273
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Ganin, E., Davari, B., Harame, D., Scilla, G., Sai‐Halasz, G. A. (1989) Shallowp+junction formation by a reverse‐type dopant preamorphization scheme. Applied Physics Letters, 54 (21). 2127-2129 doi:10.1063/1.101148
Chew, N. G., Cullis, A. G., Williams, G. M. (1984) Identification of tellurium precipitates in cadmium telluride layers grown by molecular beam epitaxy. Applied Physics Letters, 45 (10). 1090-1092 doi:10.1063/1.95026
Sai‐Halasz, G. A., Fang, F. F., Sedgwick, T. O., Segmuller, Armin (1980) Stress‐relieved regrowth of silicon on sapphire by laser annealing. Applied Physics Letters, 36 (6). 419-422 doi:10.1063/1.91523
Sasaki, Nobuo, Mukai, Ryoichi, Izawa, Tetsuo, Nakano, Motoo, Takagi, Mikio (1984) Melt‐width enhancement in the recrystallization of polycrystalline silicon‐on‐insulator by twin‐laser‐beam‐induced substrate interheating. Applied Physics Letters, 45 (10). 1098-1100 doi:10.1063/1.95029
Forkl, A., Dragon, T., Kronmüller, H., Habermeier, H.‐U., Mertens, G. (1990) Magneto‐optical investigation of flux penetration in Y1Ba2Cu3O7thin films. Applied Physics Letters, 57 (10). 1067-1069 doi:10.1063/1.104283
 
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