Vote for your favorite mineral in #MinCup25! - Pectolite vs. HaĆ¼yne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Akinwande, A. I., Ho, C. P., Plummer, J. D. (1984) Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2interface. Applied Physics Letters, 45 (3). 263-265 doi:10.1063/1.95165

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleExperimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2interface
JournalApplied Physics Letters
AuthorsAkinwande, A. I.Author
Ho, C. P.Author
Plummer, J. D.Author
Year1984 (August)Volume45
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.95165Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8474313Long-form Identifiermindat:1:5:8474313:6
GUID0
Full ReferenceAkinwande, A. I., Ho, C. P., Plummer, J. D. (1984) Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2interface. Applied Physics Letters, 45 (3). 263-265 doi:10.1063/1.95165
Plain TextAkinwande, A. I., Ho, C. P., Plummer, J. D. (1984) Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2interface. Applied Physics Letters, 45 (3). 263-265 doi:10.1063/1.95165
In(1984, August) Applied Physics Letters Vol. 45 (3) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Fowkes, Frederick M., Hess, Dennis W. (1973) Control of fixed charge at Siā€“SiO2interface by oxidationā€reduction treatments. Applied Physics Letters, 22 (8). 377-379 doi:10.1063/1.1654680
Reed, Michael L., Plummer, James D. (1987) Siā€SiO2interface trap production by lowā€temperature thermal processing. Applied Physics Letters, 51 (7). 514-516 doi:10.1063/1.98383
Chang, S. T., Lyon, S. A. (1986) Location of positive charge trapped near the Siā€SiO2interface at low temperature. Applied Physics Letters, 48 (2). 136-138 doi:10.1063/1.96975
Arnold, Emil (1995) Determination of oxide fixed charge at the top and bottom Si/SiO2 interfaces of siliconā€onā€insulator devices. Applied Physics Letters, 66 (22). 3027-3029 doi:10.1063/1.114266
Hickmott, T. W. (1978) Temperature dependence of the relaxation of injected charge at the polycrystallineā€siliconā€“SiO2interface. Journal of Applied Physics, 49 (6). 3392-3396 doi:10.1063/1.325242
Eades, Wendell D., Swanson, Richard M. (1984) Determination of the capture cross section and degeneracy factor of Siā€SiO2interface states. Applied Physics Letters, 44 (10). 988-990 doi:10.1063/1.94622
Crowder, S. W., Griffin, P. B., Plummer, J. D. (1994) Characterization of interface topography of the buried Siā€SiO2interface in siliconā€onā€insulator material by atomic force microscopy. Applied Physics Letters, 65 (13). 1698-1699 doi:10.1063/1.112968
Wagner, J., Gelpey, J. C., Hodgson, R. T. (1984) Photoluminescence from rapid thermal annealed and pulsedā€laserā€annealed, ionā€implanted Si. Applied Physics Letters, 45 (1). 47-49 doi:10.1063/1.95000
Sung, J. M., Lyon, S. A. (1987) Cycling of defects between trapped negative charge and interface states at the Siā€SiO2interface. Applied Physics Letters, 50 (17). 1152-1154 doi:10.1063/1.97946
Packan, P. A., Plummer, J. D. (1990) Temperature and time dependence of B and P diffusion in Si during surface oxidation. Journal of Applied Physics, 68 (8). 4327-4329 doi:10.1063/1.346204
Shiono, Noboru, Shimaya, Masakazu, Nakajima, Osaake (1986) Charge character of interface traps at the Siā€SiO2interface. Applied Physics Letters, 48 (17). 1129-1131 doi:10.1063/1.96446
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Ā© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833ā€“844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 19:02:50
Go to top of page