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Reed, Michael L., Plummer, James D. (1987) Si‐SiO2interface trap production by low‐temperature thermal processing. Applied Physics Letters, 51 (7). 514-516 doi:10.1063/1.98383

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Reference TypeJournal (article/letter/editorial)
TitleSi‐SiO2interface trap production by low‐temperature thermal processing
JournalApplied Physics Letters
AuthorsReed, Michael L.Author
Plummer, James D.Author
Year1987 (August 17)Volume51
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.98383Search in ResearchGate
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Mindat Ref. ID8482212Long-form Identifiermindat:1:5:8482212:3
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Full ReferenceReed, Michael L., Plummer, James D. (1987) Si‐SiO2interface trap production by low‐temperature thermal processing. Applied Physics Letters, 51 (7). 514-516 doi:10.1063/1.98383
Plain TextReed, Michael L., Plummer, James D. (1987) Si‐SiO2interface trap production by low‐temperature thermal processing. Applied Physics Letters, 51 (7). 514-516 doi:10.1063/1.98383
In(1987, August) Applied Physics Letters Vol. 51 (7) AIP Publishing

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Reed, Michael L., Plummer, James D. (1988) Chemistry of Si‐SiO2interface trap annealing. Journal of Applied Physics, 63 (12). 5776-5793 doi:10.1063/1.340317
Reed, Michael L., Fishbein, Bruce, Plummer, James D. (1985) Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Applied Physics Letters, 47 (4). 400-402 doi:10.1063/1.96124
Ogawa, Shigeo, Shiono, Noboru (1992) Interface‐trap generation induced by hot‐hole injection at the Si‐SiO2interface. Applied Physics Letters, 61 (7). 807-809 doi:10.1063/1.107751
Dori, L., Stathis, J. H., Tornello, J. A. (1991) Moderate‐temperature anneal of 7‐nm thermal SiO2in O2‐ and H2O‐free atmosphere: Effects on Si‐SiO2interface‐trap distribution. Journal of Applied Physics, 70 (3). 1510-1516 doi:10.1063/1.349564
Akinwande, A. I., Ho, C. P., Plummer, J. D. (1984) Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2interface. Applied Physics Letters, 45 (3). 263-265 doi:10.1063/1.95165
Reed, Michael L., Plummer, James D. (1986) Two Reaction Model of Interface Trap Annealing. IEEE Transactions on Nuclear Science, 33 (6) 1198-1202 doi:10.1109/tns.1986.4334578
Liu, Yaocheng, Deal, Michael D., Plummer, James D. (2004) High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates. Applied Physics Letters, 84 (14). 2563-2565 doi:10.1063/1.1691175
Hsieh, T. Y., Jung, K. H., Kwong, D. L., Kim, Y. M., Brennan, R. (1992) Boron‐enhanced low‐temperature Si epitaxy by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 61 (4). 474-476 doi:10.1063/1.107861
Peterström, S. (1993) Si‐SiO2interface trap density in boron‐ and phosphorus‐implanted silicon. Applied Physics Letters, 63 (5). 672-674 doi:10.1063/1.109953
Mui, D. S. L., Biswas, D., Reed, J., Demirel, A. L., Strite, S., Morkoç, H. (1992) Investigations of the Si3N4/Si/n‐GaAs insulator‐semiconductor interface with low interface trap density. Applied Physics Letters, 60 (20). 2511-2513 doi:10.1063/1.106950
Liu, Yaocheng, Deal, Michael D., Saraswat, Krishna C., Plummer, James D. (2002) Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si. Applied Physics Letters, 81 (24). 4634-4636 doi:10.1063/1.1527977
 
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