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Reed, Michael L., Fishbein, Bruce, Plummer, James D. (1985) Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Applied Physics Letters, 47 (4). 400-402 doi:10.1063/1.96124

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Reference TypeJournal (article/letter/editorial)
TitleRapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors
JournalApplied Physics Letters
AuthorsReed, Michael L.Author
Fishbein, BruceAuthor
Plummer, James D.Author
Year1985 (August 15)Volume47
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.96124Search in ResearchGate
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Mindat Ref. ID8476410Long-form Identifiermindat:1:5:8476410:2
GUID0
Full ReferenceReed, Michael L., Fishbein, Bruce, Plummer, James D. (1985) Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Applied Physics Letters, 47 (4). 400-402 doi:10.1063/1.96124
Plain TextReed, Michael L., Fishbein, Bruce, Plummer, James D. (1985) Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors. Applied Physics Letters, 47 (4). 400-402 doi:10.1063/1.96124
In(1985, August) Applied Physics Letters Vol. 47 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Fishbein, Bruce J. (1987) Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal-Oxide-Silicon Capacitors. Journal of the Electrochemical Society, 134. 674pp. doi:10.1149/1.2100530
Fishbein, Bruce J., Plummer, James D. (1987) Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry. Applied Physics Letters, 50 (17). 1200-1202 doi:10.1063/1.97910
Sturm, James C., Plummer, James D., Gibbons, James F. (1985) Measurement and reduction of interface states at the recrystallized silicon‐underlying insulator interface. Applied Physics Letters, 46 (12). 1171-1173 doi:10.1063/1.95748
Reed, Michael L., Plummer, James D. (1988) Chemistry of Si‐SiO2interface trap annealing. Journal of Applied Physics, 63 (12). 5776-5793 doi:10.1063/1.340317
Fishbein, Bruce J., Plummer, James D. (1988) Range distribution of implanted cesium ions in silicon dioxide films. Journal of Applied Physics, 63 (12). 5887-5889 doi:10.1063/1.340283
Reed, Michael L., Plummer, James D. (1987) Si‐SiO2interface trap production by low‐temperature thermal processing. Applied Physics Letters, 51 (7). 514-516 doi:10.1063/1.98383
Hickmott, T. W. (1977) Annealing of surface states in polycrystalline‐silicon–gate capacitors. Journal of Applied Physics, 48 (2). 723-733 doi:10.1063/1.323662
Neri, B., Olivo, P., Riccò, B. (1987) Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown. Applied Physics Letters, 51 (25). 2167-2169 doi:10.1063/1.98930
Kwong, D. L., Meyers, D. C., Alvi, N. S., Li, L. W., Norbeck, E. (1985) Refractory metal silicide formation by ion beam mixing and rapid thermal annealing. Applied Physics Letters, 47 (7). 688-691 doi:10.1063/1.96059
Reed, Michael L., Plummer, James D. (1986) Two Reaction Model of Interface Trap Annealing. IEEE Transactions on Nuclear Science, 33 (6) 1198-1202 doi:10.1109/tns.1986.4334578
Lo, G. Q., Kwong, D. L., Lee, S. (1990) Anomalous capacitance‐voltage characteristics of BF2‐implanted and rapid thermal annealedp+‐polycrystalline silicon gate metal‐oxide‐semiconductor structures. Applied Physics Letters, 57 (24). 2573-2575 doi:10.1063/1.103819
 
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