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Palmstro/m, C. J., Galvin, G. J. (1985) Solid phase epitaxy of deposited amorphous Ge on GaAs. Applied Physics Letters, 47 (8). 815-817 doi:10.1063/1.95993

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Reference TypeJournal (article/letter/editorial)
TitleSolid phase epitaxy of deposited amorphous Ge on GaAs
JournalApplied Physics Letters
AuthorsPalmstro/m, C. J.Author
Galvin, G. J.Author
Year1985 (October 15)Volume47
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.95993Search in ResearchGate
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Mindat Ref. ID8476786Long-form Identifiermindat:1:5:8476786:2
GUID0
Full ReferencePalmstro/m, C. J., Galvin, G. J. (1985) Solid phase epitaxy of deposited amorphous Ge on GaAs. Applied Physics Letters, 47 (8). 815-817 doi:10.1063/1.95993
Plain TextPalmstro/m, C. J., Galvin, G. J. (1985) Solid phase epitaxy of deposited amorphous Ge on GaAs. Applied Physics Letters, 47 (8). 815-817 doi:10.1063/1.95993
In(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing

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Yu, A. J., Galvin, G. J., Palmstro/m, C. J., Mayer, J. W. (1985) Phase formation and reaction kinetics in the thin‐film Co/GaAs system. Applied Physics Letters, 47 (9). 934-936 doi:10.1063/1.95932
Palmstro/m, C. J., Chang, C. C., Yu, A., Galvin, G. J., Mayer, J. W. (1987) Co/GaAs interfacial reactions. Journal of Applied Physics, 62 (9). 3755-3762 doi:10.1063/1.339239
Yoshino, Kiyohiko, Murakami, Kouichi, Yokoyama, Shin, Masuda, Kohzoh (1989) Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si. Applied Physics Letters, 54 (25). 2562-2564 doi:10.1063/1.101050
Hung, L. S., Kennedy, E. F., Palmstro/m, C. J., Olowolafe, J. O., Mayer, J. W., Rhodes, H. (1985) Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films. Applied Physics Letters, 47 (3). 236-238 doi:10.1063/1.96230
Dong, J. W., Chen, L. C., Palmstro/m, C. J., James, R. D., McKernan, S. (1999) Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs. Applied Physics Letters, 75 (10). 1443-1445 doi:10.1063/1.125009
Palmstro/m, C. J., Schwarz, S. A., Yablonovitch, E., Harbison, J. P., Schwartz, C. L., Florez, L. T., Gmitter, T. J., Marshall, E. D., Lau, S. S. (1990) Ge redistribution in solid‐phase Ge/Pd/GaAs ohmic contact formation. Journal of Applied Physics, 67 (1). 334-339 doi:10.1063/1.345258
Palmstro/m, C. J., Tabatabaie, N., Allen, S. J. (1988) Epitaxial growth of ErAs on (100)GaAs. Applied Physics Letters, 53 (26). 2608-2610 doi:10.1063/1.100173
Campisano, S. U., Gibson, J. M., Poate, J. M. (1985) Interface and precipitation effects in solid phase epitaxy of Sb implanted amorphous Si. Applied Physics Letters, 46 (6). 580-581 doi:10.1063/1.95546
Zhu, Jane G., Carter, C. Barry, Palmstro/m, Chris J., Mounier, Suzanne (1990) Microstructure of epitactically grown GaAs/ErAs/GaAs. Applied Physics Letters, 56 (14). 1323-1325 doi:10.1063/1.102506
Roth, John A., Anderson, C. Lawrence (1977) Silicon epitaxy by solid‐phase crystallization of deposited amorphous films. Applied Physics Letters, 31 (10). 689-691 doi:10.1063/1.89506
Wuyts, K., WattĂ©, J., Silverans, R. E., Van Hove, M., Borghs, G., Palmstro/m, C. J., Florez, L. T., MĂŒnder, H. (1994) Back side Raman measurements on Ge/Pd/n‐GaAs ohmic contact structures. Applied Physics Letters, 64 (18). 2406-2408 doi:10.1063/1.111582
 
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