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(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1985 (October)Volume47
Issue<   8   >
PublisherAIP Publishing
Mindat Ref. ID8476743Long-form Identifiermindat:1:5:8476743:7
GUID0
Full Reference(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing
Plain Text(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 47. AIP Publishing

Contains

Nakajima, Hisao, Frey, Robert (1985) Intracavity nearly degenerate four‐wave mixing in a (GaAl)As semiconductor laser. Applied Physics Letters, 47 (8). 769-771 doi:10.1063/1.96424
Takada, K., Noda, J. (1985) Broadband laser diode emitting at 1.28 ÎŒm wavelength. Applied Physics Letters, 47 (8). 771-773 doi:10.1063/1.96032
Salesky, E. T., Kimura, W. D. (1985) Energy extraction measurements of an electron beam pumped, high Kr concentration KrF laser at elevated temperatures. Applied Physics Letters, 47 (8). 774-776 doi:10.1063/1.96033
Hopkins, J. B., Rentzepis, P. M. (1985) Picosecond pulse amplification using a copper vapor laser. Applied Physics Letters, 47 (8). 776-778 doi:10.1063/1.96034
Epler, J. E., Jackson, G. S., Holonyak, N., Thornton, R. L., Burnham, R. D., Paoli, T. L. (1985) Broadband operation of coupled‐stripe multiple quantum well AlGaAs laser diodes. Applied Physics Letters, 47 (8). 779-780 doi:10.1063/1.96035
Göbel, E. O., Höger, R., Kuhl, J., Polland, H. J., Ploog, K. (1985) Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers. Applied Physics Letters, 47 (8). 781-783 doi:10.1063/1.96036
Sasaki, K., Kawagishi, H., Ishijima, Y. (1985) Phase‐matched second harmonic generation by a surface polariton along a silver layer on a slab‐type optical waveguide. Applied Physics Letters, 47 (8). 783-785 doi:10.1063/1.96037
Eckardt, R. C., Fan, Y. X., Byer, R. L., Route, R. K., Feigelson, R. S., van der Laan, Jan (1985) Efficient second harmonic generation of 10‐Όm radiation in AgGaSe2. Applied Physics Letters, 47 (8). 786-788 doi:10.1063/1.96038
Hutchins, D. A., Wilkins, D. E. (1985) Polarized shear waves using laser line sources and electromagnetic acoustic transducer detection. Applied Physics Letters, 47 (8). 789-791 doi:10.1063/1.96039
Horioka, K., Ohbayashi, K., Yoneda, H., Kasuya, K. (1985) Supersonic gas injection valve for beam neutralization from Applied‐B pulsed ion diodes. Applied Physics Letters, 47 (8). 792-793 doi:10.1063/1.95984
Shimura, F., Hockett, R. S., Reed, D. A., Wayne, D. H. (1985) Direct evidence for co‐aggregation of carbon and oxygen in Czochralski silicon. Applied Physics Letters, 47 (8). 794-796 doi:10.1063/1.95985
Kui, H. W., Turnbull, D. (1985) Melting of Ni40Pd40P20 glass. Applied Physics Letters, 47 (8). 796-797 doi:10.1063/1.95986
Muñoz, E., GarcĂ­a, F., Jimenez, B., Calleja, E., Gomez, A., Alcober, V. (1985) EL2‐related defects in neutron irradiated GaAs1−xPxalloys. Applied Physics Letters, 47 (8). 798-800 doi:10.1063/1.95987
Cheng, Y.‐T., Johnson, W. L., Nicolet, M.‐A. (1985) Dominant moving species in the formation of amorphous NiZr by solid‐state reaction. Applied Physics Letters, 47 (8). 800-802 doi:10.1063/1.95988
Fantner, E. J. (1985) Direct determination of elastic strain in strained‐layer superlattices by high‐angle x‐ray interferences. Applied Physics Letters, 47 (8). 803-805 doi:10.1063/1.95989
Paccagnella, A., Majni, G., Ottaviani, G., Della Mea, G. (1985) Effects of implanted hydrogen on Pd2Si formation. Applied Physics Letters, 47 (8). 806-808 doi:10.1063/1.95990
Lawn, Brian R. (1985) Interfacial forces and the fundamental nature of brittle cracks. Applied Physics Letters, 47 (8). 809-811 doi:10.1063/1.95991
Hibino, Yoshinori, Hanafusa, Hiroaki, Ema, Kazuhiro, Hyodo, Shin‐ichi (1985) Raman study on silica optical fibers subjected to high tensile stress. Applied Physics Letters, 47 (8). 812-814 doi:10.1063/1.95992
Palmstro/m, C. J., Galvin, G. J. (1985) Solid phase epitaxy of deposited amorphous Ge on GaAs. Applied Physics Letters, 47 (8). 815-817 doi:10.1063/1.95993
Blakers, A. W., Green, M. A. (1985) Oxidation condition dependence of surface passivation in high efficiency silicon solar cells. Applied Physics Letters, 47 (8). 818-820 doi:10.1063/1.95994
Kuech, T. F., Potemski, R. (1985) Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures. Applied Physics Letters, 47 (8). 821-823 doi:10.1063/1.95995
Gomes, Vivili M. S., Leite, José R. (1985) Electronic structure of the Si:O4complex as related to the thermal donors in silicon. Applied Physics Letters, 47 (8). 824-826 doi:10.1063/1.95996
Wang, W. I., Mendez, E. E., Kuan, T. S., Esaki, L. (1985) Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures. Applied Physics Letters, 47 (8). 826-828 doi:10.1063/1.95997
Beneking, H., Narozny, P., Emeis, N. (1985) High quality epitaxial GaAs and InP wafers by isoelectronic doping. Applied Physics Letters, 47 (8). 828-830 doi:10.1063/1.95998
Webb, James B., Halpin, C. (1985) Deposition of indium antimonide films by metalorganic magnetron sputtering. Applied Physics Letters, 47 (8). 831-833 doi:10.1063/1.95999
Matsumura, Hideki, Tachibana, Hiroyuki (1985) Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2. Applied Physics Letters, 47 (8). 833-835 doi:10.1063/1.96000
de Miguel, J. L., Fujiwara, K., Tapfer, L., Ploog, K. (1985) Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 836-838 doi:10.1063/1.96001
Lin, Hao‐Hsiung, Lee, Si‐Chen (1985) Super‐gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge‐thinning design. Applied Physics Letters, 47 (8). 839-841 doi:10.1063/1.96002
Svensson, Bengt G., Lindström, J. Lennart, Corbett, James W. (1985) Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon. Applied Physics Letters, 47 (8). 841-843 doi:10.1063/1.96003
Shantharama, L. G., Adams, A. R., Allen, E. M., Greene, P. D. (1985) Elimination of ionized impurity scattering in heavily doped GaxIn1−xAsyP1−y. Applied Physics Letters, 47 (8). 843-845 doi:10.1063/1.96004
Ando, Koushi, Yamaguchi, Masafumi (1985) Radiation resistance of InP solar cells under light illumination. Applied Physics Letters, 47 (8). 846-848 doi:10.1063/1.96005
Sedgwick, T. O., Michel, A. E., Cohen, S. A., Deline, V. R., Oehrlein, G. S. (1985) Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon. Applied Physics Letters, 47 (8). 848-850 doi:10.1063/1.96423
Ryu, J., Kim, H. J., Davis, Robert F. (1985) Microstructural, chemical, and electrical characterization of the beta silicon carbide thin‐film silicon substrate interface. Applied Physics Letters, 47 (8). 850-852 doi:10.1063/1.96006
Hauenstein, R. J., Schlesinger, T. E., McGill, T. C., Hunt, B. D., Schowalter, L. J. (1985) Schottky barrier height measurements of epitaxial NiSi2 on Si. Applied Physics Letters, 47 (8). 853-855 doi:10.1063/1.96007
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Chen, F. Y. (1985) Photoinduced modulation absorption by tuning pumping wavelength. Applied Physics Letters, 47 (8). 858-859 doi:10.1063/1.96009
Yamagishi, H., Kida, H., Kamada, T., Okamoto, H., Hamakawa, Y. (1985) Analysis of light and current induced effects in hydrogenated amorphous silicon. Applied Physics Letters, 47 (8). 860-862 doi:10.1063/1.96010
Ishii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011
Osaka, Fukunobu, Kishi, Yutaka, Kobayashi, Masahiro, Mikawa, Takashi (1985) Low‐temperature impact ionization rates in (111) oriented InP. Applied Physics Letters, 47 (8). 865-866 doi:10.1063/1.95957
Larsson, A., Yariv, A., Tell, R., Maserjian, J., Eng, S. T. (1985) Spectral and temporal characteristics of AlGaAs/GaAs superlatticep‐i‐nphotodetectors. Applied Physics Letters, 47 (8). 866-868 doi:10.1063/1.95958
Shur, Michael (1985) Spill‐over effects in planar doped barrier devices. Applied Physics Letters, 47 (8). 869-871 doi:10.1063/1.95959
SpĂ€h, R., Lux‐Steiner, M., Obergfell, M., Bucher, E., Wagner, S. (1985) n‐MoSe2/p‐WSe2heterojunctions. Applied Physics Letters, 47 (8). 871-873 doi:10.1063/1.95960
Johnson, N. M. (1985) Electric field dependence of hydrogen neutralization of shallow‐acceptor impurities in single‐crystal silicon. Applied Physics Letters, 47 (8). 874-876 doi:10.1063/1.95961
Johnson, Phelps B., Ellis, Arthur B., Biefeld, R. M., Ginley, D. S. (1985) Stabilization and luminescent properties of GaP/GaAs0.4P0.6strained‐layer superlattice electrodes. Applied Physics Letters, 47 (8). 877-879 doi:10.1063/1.95962
Cho, N.‐H., De Cooman, B. C., Carter, C. B., Fletcher, R., Wagner, D. K. (1985) Antiphase boundaries in GaAs. Applied Physics Letters, 47 (8). 879-881 doi:10.1063/1.95963
Kolodziejski, L. A., Gunshor, R. L., Otsuka, N., Zhang, X.‐C., Chang, S.‐K., Nurmikko, A. V. (1985) (100) superlattices of CdTe‐Cd0.76Mn0.24Te on (100)GaAs. Applied Physics Letters, 47 (8). 882-884 doi:10.1063/1.95964
Klem, J., Peng, C. K., Henderson, T., Morkoç, H., Otsuka, N., Choi, C., Yu, P. W. (1985) GaAs/GaAs1−ySbystrained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 885-887 doi:10.1063/1.95965
Bonnefoi, A. R., Chow, D. H., McGill, T. C. (1985) Inverted base‐collector tunnel transistors. Applied Physics Letters, 47 (8). 888-890 doi:10.1063/1.95966
Shen, H., Pollak, Fred H., Sacks, R. N. (1985) Raman scattering determination of free‐carrier concentration and surface space‐charge layer in 〈100〉n‐GaAs. Applied Physics Letters, 47 (8). 891-893 doi:10.1063/1.95967
De Lucia, Frank C., Guenther, B. D., Anderson, Todd (1985) Microwave generation from picosecond demodulation sources. Applied Physics Letters, 47 (8). 894-896 doi:10.1063/1.95968
Ong, Hiap Liew (1985) Erratum: External field enhanced optical bistability in nematic liquid crystals [Appl. Phys. Lett. 46, 822 (1985)]. Applied Physics Letters, 47 (8). 897 doi:10.1063/1.96441

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