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Ishii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011

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Reference TypeJournal (article/letter/editorial)
TitleSelective Ge deposition on Si using thermal decomposition of GeH4
JournalApplied Physics Letters
AuthorsIshii, HiromuAuthor
Takahashi, YasuoAuthor
Murota, JunichiAuthor
Year1985 (October 15)Volume47
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.96011Search in ResearchGate
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Mindat Ref. ID8476821Long-form Identifiermindat:1:5:8476821:4
GUID0
Full ReferenceIshii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011
Plain TextIshii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011
In(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing

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Takahashi, Yasuo, Ishii, Hiromu, Murota, Junichi (1985) New platinum silicide formation method using reaction between platinum and silane. Journal of Applied Physics, 58 (8). 3190-3194 doi:10.1063/1.335827
Murota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781
Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
Takahasi, Yasuo, Ishii, Hiromu, Fujinaga, Kiyohisa (1990) Reduction reaction of native oxide at the initial stage of GeH4chemical vapor deposition on (100) Si. Applied Physics Letters, 57 (6). 599-601 doi:10.1063/1.104248
Schütz, Reiner, Murota, Junichi, Maeda, Takahiro, Kircher, Roland, Yokoo, Kuniyoshi, Ono, Shoichi (1992) Low‐temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low‐pressure chemical vapor deposition. Applied Physics Letters, 61 (22). 2674-2676 doi:10.1063/1.108105
Fujiu, Masaki, Takahashi, Kazuya, Sakuraba, Masao, Murota, Junichi (2004) Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0). Applied Surface Science, 224. 206-209 doi:10.1016/j.apsusc.2003.08.047
Sakuraba, Masao, Murota, Junichi, Watanabe, Takeshi, Sawada, Yasuji, Ono, Shoichi (1994) Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases. Applied Surface Science, 82. 354-358 doi:10.1016/0169-4332(94)90241-0
Nakayama, Satoshi, Yonezawa, Hiroki, Murota, Junichi (1984) Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l493
Takeuchi, Hajime, Matsuura, Takashi, Murota, Junichi (2000) Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma. Applied Physics Letters, 77 (12). 1828pp. doi:10.1063/1.1310624
Takahashi, Kazuya, Fujiu, Masaki, Sakuraba, Masao, Murota, Junichi (2003) Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment. Applied Surface Science, 212. 193-196 doi:10.1016/s0169-4332(03)00069-2
Murota, Junichi, Sakuraba, Masao, Ono, Shoichi (1993) Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4gas. Applied Physics Letters, 62 (19). 2353-2355 doi:10.1063/1.109416
 
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