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Murota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment
JournalApplied Physics Letters
AuthorsMurota, JunichiAuthor
Nakamura, NaotoAuthor
Kato, ManabuAuthor
Mikoshiba, NobuoAuthor
Ohmi, TadahiroAuthor
Year1989 (March 13)Volume54
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100781Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485951Long-form Identifiermindat:1:5:8485951:6
GUID0
Full ReferenceMurota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781
Plain TextMurota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781
In(1989, March) Applied Physics Letters Vol. 54 (11) AIP Publishing

See Also

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Kato, Manabu, Sato, Taketoshi, Murota, Junichi, Mikoshiba, Nobuo (1990) Nucleation control of silicon on silicon oxide for low-temperature CVD and silicon selective epitaxy. Journal of Crystal Growth, 99 (1). 240-244 doi:10.1016/0022-0248(90)90520-u
Uetake, Hiroaki, Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo (1990) Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher. Applied Physics Letters, 57 (6). 596-598 doi:10.1063/1.103609
Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203
Sakuraba, Masao, Murota, Junichi, Mikoshiba, Nobuo, Ono, Shoichi (1991) Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition. Journal of Crystal Growth, 115 (1). 79-82 doi:10.1016/0022-0248(91)90716-i
Ishii, Hiromu, Takahashi, Yasuo, Murota, Junichi (1985) Selective Ge deposition on Si using thermal decomposition of GeH4. Applied Physics Letters, 47 (8). 863-865 doi:10.1063/1.96011
Fukuda, Koichi, Murota, Junichi, Ono, Shoichi, Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro (1991) Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing. Applied Physics Letters, 59 (22). 2853-2855 doi:10.1063/1.105855
Shindo, Wataru, Ohmi, Tadahiro (1996) Ion energy, ion flux, and ion mass effects on low‐temperature silicon epitaxy using low‐energy ion bombardment process. Journal of Applied Physics, 79 (5). 2347-2351 doi:10.1063/1.361161
MUROTA, J., KATO, M., KIRCHER, R., ONO, S. (1991) LOW-TEMPERATURE SILICON AND GERMANIUM CVD IN ULTRACLEAN ENVIRONMENT. Le Journal de Physique IV, 2. doi:10.1051/jp4:1991293
Ohmi, Tadahiro, Iwabuchi, Hiroshi, Shibata, Tadashi, Ichikawa, Takeshi (1989) Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process. Applied Physics Letters, 54 (3). 253-255 doi:10.1063/1.100981
Nakayama, Satoshi, Yonezawa, Hiroki, Murota, Junichi (1984) Deposition of Phosphorus Doped Silicon Films by Thermal Decomposition of Disilane. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l493
 
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