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Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203

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Reference TypeJournal (article/letter/editorial)
TitleDirectional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma
JournalApplied Physics Letters
AuthorsMatsuura, TakashiAuthor
Uetake, HiroakiAuthor
Ohmi, TadahiroAuthor
Murota, JunichiAuthor
Fukuda, KoichiAuthor
Mikoshiba, NobuoAuthor
Kawashima, TadashiAuthor
Yamashita, YoshihiroAuthor
Year1990 (April 2)Volume56
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.103203Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489911Long-form Identifiermindat:1:5:8489911:6
GUID0
Full ReferenceMatsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203
Plain TextMatsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203
In(1990, April) Applied Physics Letters Vol. 56 (14) AIP Publishing

See Also

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Uetake, Hiroaki, Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo (1990) Anisotropic etching of n+ polycrystalline silicon with high selectivity using a chlorine and nitrogen plasma in an ultraclean electron cyclotron resonance etcher. Applied Physics Letters, 57 (6). 596-598 doi:10.1063/1.103609
Fukuda, Koichi, Murota, Junichi, Ono, Shoichi, Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro (1991) Electron‐cyclotron‐resonance plasma‐enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing. Applied Physics Letters, 59 (22). 2853-2855 doi:10.1063/1.105855
Matsuura, Takashi, Ohmi, Tadahiro, Murota, Junichi, Ono, Shoichi (1992) Inversion from selective homoepitaxy of Si to selective Si film deposition on SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 61 (24). 2908-2910 doi:10.1063/1.108018
Matsuura, Takashi, Honda, Yasuhiko, Murota, Junichi (1999) Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma. Applied Physics Letters, 74 (23). 3573-3575 doi:10.1063/1.124165
Takeuchi, Hajime, Matsuura, Takashi, Murota, Junichi (2000) Contribution of ions and radicals in etching of Si[sub 1−x]Ge[sub x] epitaxial films using an electron-cyclotron-resonance chlorine plasma. Applied Physics Letters, 77 (12). 1828pp. doi:10.1063/1.1310624
Murota, Junichi, Nakamura, Naoto, Kato, Manabu, Mikoshiba, Nobuo, Ohmi, Tadahiro (1989) Low‐temperature silicon selective deposition and epitaxy on silicon using the thermal decomposition of silane under ultraclean environment. Applied Physics Letters, 54 (11). 1007-1009 doi:10.1063/1.100781
Matsuura, Takashi, Murota, Junichi, Sawada, Yasuji, Ohmi, Tadahiro (1993) Self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and Ar+ion irradiation. Applied Physics Letters, 63 (20). 2803-2805 doi:10.1063/1.110340
Sugiyama, Takayuki, Matsuura, Takashi, Murota, Junichi (1997) Atomic-layer etching of Ge using an ultraclean ECR plasma. Applied Surface Science, 112. 187-190 doi:10.1016/s0169-4332(96)01026-4
Suzue, Koji, Matsuura, Takashi, Murota, Junichi, Sawada, Yasuji, Ohmi, Tadahiro (1994) Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiation. Applied Surface Science, 82. 422-427 doi:10.1016/0169-4332(94)90252-6
Salimian, S., Cooper, C. B., Ellingboe, A. (1990) Etching of SiO2in an electron cyclotron resonance argon plasma. Applied Physics Letters, 56 (14). 1311-1313 doi:10.1063/1.103198
Kanetsuna, Toshikazu, Matsuura, Takashi, Murota, Junichi (2001) Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma. Journal of the Electrochemical Society, 148. doi:10.1149/1.1380258
 
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