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Salimian, S., Cooper, C. B., Ellingboe, A. (1990) Etching of SiO2in an electron cyclotron resonance argon plasma. Applied Physics Letters, 56 (14). 1311-1313 doi:10.1063/1.103198

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Reference TypeJournal (article/letter/editorial)
TitleEtching of SiO2in an electron cyclotron resonance argon plasma
JournalApplied Physics Letters
AuthorsSalimian, S.Author
Cooper, C. B.Author
Ellingboe, A.Author
Year1990 (April 2)Volume56
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.103198Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8489901Long-form Identifiermindat:1:5:8489901:9
GUID0
Full ReferenceSalimian, S., Cooper, C. B., Ellingboe, A. (1990) Etching of SiO2in an electron cyclotron resonance argon plasma. Applied Physics Letters, 56 (14). 1311-1313 doi:10.1063/1.103198
Plain TextSalimian, S., Cooper, C. B., Ellingboe, A. (1990) Etching of SiO2in an electron cyclotron resonance argon plasma. Applied Physics Letters, 56 (14). 1311-1313 doi:10.1063/1.103198
In(1990, April) Applied Physics Letters Vol. 56 (14) AIP Publishing

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Pearton, S. J., Chakrabarti, U. K., Kinsella, A. P., Johnson, D., Constantine, C. (1990) Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar. Applied Physics Letters, 56 (15). 1424-1426 doi:10.1063/1.102487
Matsuura, Takashi, Uetake, Hiroaki, Ohmi, Tadahiro, Murota, Junichi, Fukuda, Koichi, Mikoshiba, Nobuo, Kawashima, Tadashi, Yamashita, Yoshihiro (1990) Directional etching of Si with perfect selectivity to SiO2using an ultraclean electron cyclotron resonance plasma. Applied Physics Letters, 56 (14). 1339-1341 doi:10.1063/1.103203
Delfino, M., Salimian, S., Hodul, D. (1991) Removal of fluorocarbon residue on Si with an electron cyclotron resonance excited Ar plasma. Journal of Applied Physics, 70 (3). 1712-1717 doi:10.1063/1.349541
Tsai, W., Reynolds, G. J., Hikido, S., Cooper, C. B. (1992) Electron cyclotron resonance plasma‐enhanced filament‐assisted diamond growth. Applied Physics Letters, 60 (12). 1444-1446 doi:10.1063/1.107265
Carl, D. A., Hess, D. W., Lieberman, M. A. (1990) Kinetics of photoresist etching in an electron cyclotron resonance plasma. Journal of Applied Physics, 68 (4). 1859-1865 doi:10.1063/1.346598
Tsujimoto, Kazunori, Kumihashi, Takao, Tachi, Shinichi (1993) Novel short‐gas‐residence‐time electron cyclotron resonance plasma etching. Applied Physics Letters, 63 (14). 1915-1917 doi:10.1063/1.110647
Pearton, S. J., Abernathy, C. R., Ren, F. (1994) Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN. Applied Physics Letters, 64 (17). 2294-2296 doi:10.1063/1.111648
Samukawa, Seiji, Suzuki, Yasuhiro, Sasaki, Masami (1990) Extremely high‐selective electron cyclotron resonance plasma etching for phosphorus‐doped polycrystalline silicon. Applied Physics Letters, 57 (4). 403-405 doi:10.1063/1.103649
Saitoh, Tohru, Yokogawa, Toshiya, Narusawa, Tadashi (1990) Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2electron cyclotron resonance plasma. Applied Physics Letters, 56 (9). 839-841 doi:10.1063/1.102678
Watanabe, Heiji, Matsui, Shinji (1992) Electron‐beam‐assisted dry etching for GaAs using electron cyclotron resonance plasma electron source. Applied Physics Letters, 61 (25). 3011-3013 doi:10.1063/1.107994
Pearton, S. J., Ren, F., Abernathy, C. R. (1994) Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar. Applied Physics Letters, 64 (13). 1673-1675 doi:10.1063/1.111827
 
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