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Fujiu, Masaki, Takahashi, Kazuya, Sakuraba, Masao, Murota, Junichi (2004) Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0). Applied Surface Science, 224. 206-209 doi:10.1016/j.apsusc.2003.08.047

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Reference TypeJournal (article/letter/editorial)
TitleEffect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)
JournalApplied Surface Science
AuthorsFujiu, MasakiAuthor
Takahashi, KazuyaAuthor
Sakuraba, MasaoAuthor
Murota, JunichiAuthor
Year2004 (March)Volume224
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2003.08.047Search in ResearchGate
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Mindat Ref. ID9905757Long-form Identifiermindat:1:5:9905757:4
GUID0
Full ReferenceFujiu, Masaki, Takahashi, Kazuya, Sakuraba, Masao, Murota, Junichi (2004) Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0). Applied Surface Science, 224. 206-209 doi:10.1016/j.apsusc.2003.08.047
Plain TextFujiu, Masaki, Takahashi, Kazuya, Sakuraba, Masao, Murota, Junichi (2004) Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0). Applied Surface Science, 224. 206-209 doi:10.1016/j.apsusc.2003.08.047
In(n.d.) Applied Surface Science Vol. 224. Elsevier BV

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Jeong, Youngcheon, Sakuraba, Masao, Murota, Junichi (2004) Epitaxial growth of N delta doped Si films on Si(1 0 0) by alternately supplied NH3 and SiH4. Applied Surface Science, 224. 197-201 doi:10.1016/j.apsusc.2003.08.034
Takatsuka, Toshinori, Fujiu, Masaki, Sakuraba, Masao, Matsuura, Takashi, Murota, Junichi (2000) Surface reaction of CH3SiH3 on Ge(100) and Si(100). Applied Surface Science, 162. 156-160 doi:10.1016/s0169-4332(00)00185-9
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Muto, Daisuke, Sakuraba, Masao, Seino, Takuya, Murota, Junichi (2004) Ar plasma irradiation effects in atomically controlled Si epitaxial growth. Applied Surface Science, 224. 210-214 doi:10.1016/j.apsusc.2003.08.048
Sakuraba, Masao, Muto, Daisuke, Seino, Takuya, Murota, Junichi (2003) Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma. Applied Surface Science, 212. 197-200 doi:10.1016/s0169-4332(03)00072-2
Sakuraba, Masao, Murota, Junichi, Watanabe, Takeshi, Sawada, Yasuji, Ono, Shoichi (1994) Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases. Applied Surface Science, 82. 354-358 doi:10.1016/0169-4332(94)90241-0
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Tanno, Hiroki, Sakuraba, Masao, Tillack, Bernd, Murota, Junichi (2008) Heavy atomic-layer doping of B in low-temperature Si epitaxial growth on Si(100) by ultraclean low-pressure chemical vapor deposition. Applied Surface Science, 254. 6086-6089 doi:10.1016/j.apsusc.2008.02.132
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