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Lee, Doohwan, Takehiro, Shinobu, Sakuraba, Masao, Murota, Junichi, Tsuchiya, Toshiaki (2004) Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD. Applied Surface Science, 224. 254-259 doi:10.1016/j.apsusc.2003.08.052

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD
JournalApplied Surface Science
AuthorsLee, DoohwanAuthor
Takehiro, ShinobuAuthor
Sakuraba, MasaoAuthor
Murota, JunichiAuthor
Tsuchiya, ToshiakiAuthor
Year2004 (March)Volume224
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2003.08.052Search in ResearchGate
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Mindat Ref. ID9905762Long-form Identifiermindat:1:5:9905762:6
GUID0
Full ReferenceLee, Doohwan, Takehiro, Shinobu, Sakuraba, Masao, Murota, Junichi, Tsuchiya, Toshiaki (2004) Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD. Applied Surface Science, 224. 254-259 doi:10.1016/j.apsusc.2003.08.052
Plain TextLee, Doohwan, Takehiro, Shinobu, Sakuraba, Masao, Murota, Junichi, Tsuchiya, Toshiaki (2004) Fabrication of 0.12 μm pMOSFETs on high Ge fraction Si/Si1−xGex/Si(1 0 0) heterostructure with ultrashallow source/drain formed using B-doped SiGe CVD. Applied Surface Science, 224. 254-259 doi:10.1016/j.apsusc.2003.08.052
In(n.d.) Applied Surface Science Vol. 224. Elsevier BV

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Seo, Takahiro, Sakuraba, Masao, Murota, Junichi (2008) Electrical characteristics of hole resonant tunneling diodes with high Ge fraction (x>0.4) Si/strained Si1−xGex/Si(100) heterostructure. Applied Surface Science, 254. 6265-6267 doi:10.1016/j.apsusc.2008.02.153
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Fujiu, Masaki, Takahashi, Kazuya, Sakuraba, Masao, Murota, Junichi (2004) Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0). Applied Surface Science, 224. 206-209 doi:10.1016/j.apsusc.2003.08.047
Noh, Jintae, Takehiro, Shinobu, Sakuraba, Masao, Murota, Junichi (2004) Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment. Applied Surface Science, 224. 77-81 doi:10.1016/j.apsusc.2003.08.046
Shim, Hyunyoung, Sakuraba, Masao, Tsuchiya, Toshiaki, Murota, Junichi (2003) Work function of impurity-doped polycrystalline Si1−−Ge C film deposited by ultraclean low-pressure CVD. Applied Surface Science, 212. 209-212 doi:10.1016/s0169-4332(03)00079-5
Yokogawa, Takashi, Ishibashi, Kiyohisa, Sakuraba, Masao, Murota, Junichi, Inokuchi, Yasuhiro, Kunii, Yasuo, Kurokawa, Harushige (2008) Self-limited growth of Si on B atomic-layer formed Ge(100) by ultraclean low-pressure CVD system. Applied Surface Science, 254. 6090-6093 doi:10.1016/j.apsusc.2008.02.131
Kanaya, Toshiyuki, Sakuraba, Masao, Murota, Junichi (2003) W delta doping in Si(1 0 0) using ultraclean low-pressure CVD. Applied Surface Science, 212. 684-688 doi:10.1016/s0169-4332(03)00416-1
Shimamune, Yosuke, Sakuraba, Masao, Murota, Junichi, Tillack, Bernd (2004) Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique. Applied Surface Science, 224. 202-205 doi:10.1016/j.apsusc.2003.08.033
Takahashi, Kazuya, Fujiu, Masaki, Sakuraba, Masao, Murota, Junichi (2003) Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment. Applied Surface Science, 212. 193-196 doi:10.1016/s0169-4332(03)00069-2
Tsuchiya, Toshiaki, Yoshida, Keiichi, Sakuraba, Masao, Murota, Junichi (2011) Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs. Key Engineering Materials, 470. 201-206 doi:10.4028/www.scientific.net/kem.470.201
Muto, Daisuke, Sakuraba, Masao, Seino, Takuya, Murota, Junichi (2004) Ar plasma irradiation effects in atomically controlled Si epitaxial growth. Applied Surface Science, 224. 210-214 doi:10.1016/j.apsusc.2003.08.048
 
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