Vote for your favorite mineral in #MinCup25! - Taenite vs. Nontronite
It's a mineral found mostly in the farthest reaches of space vs one so common an exhaustive list of localities is nigh impossible as alloy #taenite faces off against clay #nontronite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Kuech, T. F., Potemski, R. (1985) Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures. Applied Physics Letters, 47 (8). 821-823 doi:10.1063/1.95995

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleReduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
JournalApplied Physics Letters
AuthorsKuech, T. F.Author
Potemski, R.Author
Year1985 (October 15)Volume47
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.95995Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8476789Long-form Identifiermindat:1:5:8476789:9
GUID0
Full ReferenceKuech, T. F., Potemski, R. (1985) Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures. Applied Physics Letters, 47 (8). 821-823 doi:10.1063/1.95995
Plain TextKuech, T. F., Potemski, R. (1985) Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures. Applied Physics Letters, 47 (8). 821-823 doi:10.1063/1.95995
In(1985, October) Applied Physics Letters Vol. 47 (8) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Kuech, T. F., Tischler, M. A., Potemski, R. (1989) Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs. Applied Physics Letters, 54 (10). 910-912 doi:10.1063/1.100805
Kuech, T. F., Tischler, M. A., Wang, P.‐J., Scilla, G., Potemski, R., Cardone, F. (1988) Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (14). 1317-1319 doi:10.1063/1.100008
Kuech, T. F., Potemski, R., Chappell, T. I. (1985) Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 58 (3). 1196-1203 doi:10.1063/1.336137
Huang, J. W., Kuech, T. F. (1994) Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation. Applied Physics Letters, 65 (5). 604-606 doi:10.1063/1.112270
Frankel, Michael Y., Huang, J.‐W., Kuech, T. F. (1995) Ultrafast photodetector materials based on oxygen‐doped metalorganic vapor phase epitaxy GaAs. Applied Physics Letters, 66 (5). 634-636 doi:10.1063/1.114143
Huang, J. W., Kuech, T. F., Anderson, T. J. (1995) Oxygen‐based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide. Applied Physics Letters, 67 (8). 1116-1118 doi:10.1063/1.114979
Scilla, G. J., Kuech, T. F., Cardone, F. (1988) Improved detection of carbon in GaAs by secondary ion mass spectroscopy: The influence of hydrocarbons in metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (20). 1704-1706 doi:10.1063/1.99023
Kachi, Tetsu (1994) Low‐pressure metalorganic vapor phase epitaxy of GaAs using monoethylarsine. Applied Physics Letters, 65 (26). 3374-3376 doi:10.1063/1.112396
Kuech, T. F., Wolford, D. J., Veuhoff, E., Deline, V., Mooney, P. M., Potemski, R., Bradley, J. (1987) Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors. Journal of Applied Physics, 62 (2). 632-643 doi:10.1063/1.339792
Huang, J. W., Bray, K. L., Kuech, T. F. (1996) Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs. Journal of Applied Physics, 80 (12). 6819-6826 doi:10.1063/1.363811
Kuech, T.F., Tischler, M.A., Potemski, R., Cardone, F., Scilla, G. (1989) Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 98 (1). 174-187 doi:10.1016/0022-0248(89)90197-8
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 15, 2025 18:32:35
Go to top of page