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Hayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Magnetic field dependence of hot‐electron transport in GaAs. Applied Physics Letters, 47 (9). 964-966 doi:10.1063/1.95945

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Reference TypeJournal (article/letter/editorial)
TitleMagnetic field dependence of hot‐electron transport in GaAs
JournalApplied Physics Letters
AuthorsHayes, J. R.Author
Levi, A. F. J.Author
Wiegmann, W.Author
Year1985 (November)Volume47
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.95945Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8476876Long-form Identifiermindat:1:5:8476876:4
GUID0
Full ReferenceHayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Magnetic field dependence of hot‐electron transport in GaAs. Applied Physics Letters, 47 (9). 964-966 doi:10.1063/1.95945
Plain TextHayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Magnetic field dependence of hot‐electron transport in GaAs. Applied Physics Letters, 47 (9). 964-966 doi:10.1063/1.95945
In(1985, November) Applied Physics Letters Vol. 47 (9) AIP Publishing

See Also

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Levi, A. F. J., Hayes, J. R., Platzman, P. M., Wiegmann, W. (1985) Injected-Hot-Electron Transport in GaAs. Physical Review Letters, 55 (19). 2071-2073 doi:10.1103/physrevlett.55.2071
Hayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Hot-Electron Spectroscopy of GaAs. Physical Review Letters, 54 (14). 1570-1572 doi:10.1103/physrevlett.54.1570
Reynolds, D. C., Yu, P. W., Evans, K. R., Stutz, C. E., Loehr, J. (1993) Magnetic field dependence of selective pair luminescence in GaAs. Applied Physics Letters, 62 (9). 964-966 doi:10.1063/1.108534
Hayes, J. R., Levi, A. F. J., Weigmann, W. (1986) Dynamics of injected electron cooling in GaAs. Applied Physics Letters, 48 (20). 1365-1367 doi:10.1063/1.96911
Berthold, K., Levi, A. F. J., Walker, J., Malik, R. J. (1989) High‐field transport in GaAs transistors. Applied Physics Letters, 54 (9). 813-815 doi:10.1063/1.100855
Höpfel, R. A., Shah, J., Gossard, A. C., Wiegmann, W. (1985) Electroreflectance of GaAs‐AlGaAs modulation‐doped field‐effect transistors. Applied Physics Letters, 47 (2). 163-165 doi:10.1063/1.96249
Levi, A.F.J., Hayes, J.R., Platzman, P.M., Wiegmann, W. (1985) Hot electron spectroscopy of GaAs. Physica B+C, 134 (1). 480-486 doi:10.1016/0378-4363(85)90391-2
Beton, P. H., Long, A. P., Kelly, M. J. (1987) Hot‐electron transport in GaAs in the presence of a magnetic field. Applied Physics Letters, 51 (18). 1425-1427 doi:10.1063/1.98645
Hayes, J. R., Levi, A. F. J., Gossard, A. C., English, J. H. (1986) Base transport dynamics in a heterojunction bipolar transistor. Applied Physics Letters, 49 (21). 1481-1483 doi:10.1063/1.97309
Chiu, T. H., Levi, A. F. J. (1989) Electron transport in an AlSb/InAs/GaSb tunnel emitter hot‐electron transistor. Applied Physics Letters, 55 (18). 1891-1893 doi:10.1063/1.102163
Hayes, J. R., Harbison, J. P. (1988) Hot‐electron transport in a graded band‐gap base heterojunction bipolar transistor. Applied Physics Letters, 53 (6). 490-492 doi:10.1063/1.99877
 
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