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Hayes, J. R., Levi, A. F. J., Weigmann, W. (1986) Dynamics of injected electron cooling in GaAs. Applied Physics Letters, 48 (20). 1365-1367 doi:10.1063/1.96911

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Reference TypeJournal (article/letter/editorial)
TitleDynamics of injected electron cooling in GaAs
JournalApplied Physics Letters
AuthorsHayes, J. R.Author
Levi, A. F. J.Author
Weigmann, W.Author
Year1986 (May 19)Volume48
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.96911Search in ResearchGate
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Mindat Ref. ID8477575Long-form Identifiermindat:1:5:8477575:5
GUID0
Full ReferenceHayes, J. R., Levi, A. F. J., Weigmann, W. (1986) Dynamics of injected electron cooling in GaAs. Applied Physics Letters, 48 (20). 1365-1367 doi:10.1063/1.96911
Plain TextHayes, J. R., Levi, A. F. J., Weigmann, W. (1986) Dynamics of injected electron cooling in GaAs. Applied Physics Letters, 48 (20). 1365-1367 doi:10.1063/1.96911
In(1986, May) Applied Physics Letters Vol. 48 (20) AIP Publishing

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Hayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Magnetic field dependence of hot‐electron transport in GaAs. Applied Physics Letters, 47 (9). 964-966 doi:10.1063/1.95945
Levi, A. F. J., Hayes, J. R., Platzman, P. M., Wiegmann, W. (1985) Injected-Hot-Electron Transport in GaAs. Physical Review Letters, 55 (19). 2071-2073 doi:10.1103/physrevlett.55.2071
Levi, A. F. J., Hayes, J. R., Bhat, R. (1986) ‘‘Ballistic’’ injection devices in semiconductors. Applied Physics Letters, 48 (23). 1609-1611 doi:10.1063/1.96832
Levi, A. F. J., Hayes, J. R., Bhat, R. (1986) Erratum: ‘‘Ballistic’’ injection devices in semiconductors [Appl. Phys. Lett. 48, 1609 (1986)]. Applied Physics Letters, 49 (19). 1312 doi:10.1063/1.97641
Hayes, J. R., Levi, A. F. J., Gossard, A. C., English, J. H. (1986) Base transport dynamics in a heterojunction bipolar transistor. Applied Physics Letters, 49 (21). 1481-1483 doi:10.1063/1.97309
Hayes, J. R., Levi, A. F. J., Wiegmann, W. (1985) Hot-Electron Spectroscopy of GaAs. Physical Review Letters, 54 (14). 1570-1572 doi:10.1103/physrevlett.54.1570
Levi, A. F. J., Hayes, J. R., Gossard, A. C., English, J. H. (1987) Electroluminescence from the base of a GaAs/AlGaAs double heterojunction bipolar transistor. Applied Physics Letters, 50 (2). 98-100 doi:10.1063/1.97831
Tung, R. T., Levi, A. F. J., Gibson, J. M. (1986) Control of a natural permeable CoSi2base transistor. Applied Physics Letters, 48 (10). 635-637 doi:10.1063/1.96728
Tung, R. T., Gibson, J. M., Levi, A. F. J. (1986) Growth of strained‐layer semiconductor‐metal‐semiconductor heterostructures. Applied Physics Letters, 48 (19). 1264-1266 doi:10.1063/1.96998
Jewell, J. L., Lee, Y. H., Duffy, J. F., Gossard, A. C., Wiegmann, W. (1986) Parallel operation and crosstalk measurements in GaAs Ă©talon optical logic devices. Applied Physics Letters, 48 (20). 1342-1344 doi:10.1063/1.96955
Berthold, K., Levi, A. F. J., Walker, J., Malik, R. J. (1989) High‐field transport in GaAs transistors. Applied Physics Letters, 54 (9). 813-815 doi:10.1063/1.100855
 
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