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Tung, R. T., Levi, A. F. J., Gibson, J. M. (1986) Control of a natural permeable CoSi2base transistor. Applied Physics Letters, 48 (10). 635-637 doi:10.1063/1.96728

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Reference TypeJournal (article/letter/editorial)
TitleControl of a natural permeable CoSi2base transistor
JournalApplied Physics Letters
AuthorsTung, R. T.Author
Levi, A. F. J.Author
Gibson, J. M.Author
Year1986 (March 10)Volume48
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.96728Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8477007Long-form Identifiermindat:1:5:8477007:9
GUID0
Full ReferenceTung, R. T., Levi, A. F. J., Gibson, J. M. (1986) Control of a natural permeable CoSi2base transistor. Applied Physics Letters, 48 (10). 635-637 doi:10.1063/1.96728
Plain TextTung, R. T., Levi, A. F. J., Gibson, J. M. (1986) Control of a natural permeable CoSi2base transistor. Applied Physics Letters, 48 (10). 635-637 doi:10.1063/1.96728
In(1986, March) Applied Physics Letters Vol. 48 (10) AIP Publishing

See Also

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Tung, R. T., Gibson, J. M., Levi, A. F. J. (1986) Growth of strained‐layer semiconductor‐metal‐semiconductor heterostructures. Applied Physics Letters, 48 (19). 1264-1266 doi:10.1063/1.96998
Hensel, J. C., Levi, A. F. J., Tung, R. T., Gibson, J. M. (1985) Transistor action in Si/CoSi2/Si heterostructures. Applied Physics Letters, 47 (2). 151-153 doi:10.1063/1.96245
Batstone, J. L., Gibson, J. M., Tung, R. T., Levi, A. F. J. (1988) ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Applied Physics Letters, 52 (10). 828-830 doi:10.1063/1.99297
Hull, R., Bean, J. C., Cerdeira, F., Fiory, A. T., Gibson, J. M. (1986) Stability of semiconductor strained‐layer superlattices. Applied Physics Letters, 48 (1). 56-58 doi:10.1063/1.96761
Hayes, J. R., Levi, A. F. J., Gossard, A. C., English, J. H. (1986) Base transport dynamics in a heterojunction bipolar transistor. Applied Physics Letters, 49 (21). 1481-1483 doi:10.1063/1.97309
Levi, A. F. J., Hayes, J. R., Bhat, R. (1986) ‘‘Ballistic’’ injection devices in semiconductors. Applied Physics Letters, 48 (23). 1609-1611 doi:10.1063/1.96832
Tung, R. T., Ng, K. K., Gibson, J. M., Levi, A. F. J. (1986) Schottky-barrier heights of single-crystalNiSi2on Si(111): The effect of a surfacep-njunction. Physical Review B, 33 (10) 7077-7090 doi:10.1103/physrevb.33.7077
Hayes, J. R., Levi, A. F. J., Weigmann, W. (1986) Dynamics of injected electron cooling in GaAs. Applied Physics Letters, 48 (20). 1365-1367 doi:10.1063/1.96911
Levi, A. F. J., Hayes, J. R., Bhat, R. (1986) Erratum: ‘‘Ballistic’’ injection devices in semiconductors [Appl. Phys. Lett. 48, 1609 (1986)]. Applied Physics Letters, 49 (19). 1312 doi:10.1063/1.97641
Gurvitch, M., Levi, A. F. J., Tung, R. T., Nakahara, S. (1987) Epitaxial yttrium silicide on (111) silicon by vacuum annealing. Applied Physics Letters, 51 (5). 311-313 doi:10.1063/1.98453
Tung, R. T., Gibson, J. M., Poate, J. M. (1983) Growth of single crystal epitaxial silicides on silicon by the use of template layers. Applied Physics Letters, 42 (10). 888-890 doi:10.1063/1.93776
 
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