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Gurvitch, M., Levi, A. F. J., Tung, R. T., Nakahara, S. (1987) Epitaxial yttrium silicide on (111) silicon by vacuum annealing. Applied Physics Letters, 51 (5). 311-313 doi:10.1063/1.98453

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial yttrium silicide on (111) silicon by vacuum annealing
JournalApplied Physics Letters
AuthorsGurvitch, M.Author
Levi, A. F. J.Author
Tung, R. T.Author
Nakahara, S.Author
Year1987 (August 3)Volume51
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.98453Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482117Long-form Identifiermindat:1:5:8482117:9
GUID0
Full ReferenceGurvitch, M., Levi, A. F. J., Tung, R. T., Nakahara, S. (1987) Epitaxial yttrium silicide on (111) silicon by vacuum annealing. Applied Physics Letters, 51 (5). 311-313 doi:10.1063/1.98453
Plain TextGurvitch, M., Levi, A. F. J., Tung, R. T., Nakahara, S. (1987) Epitaxial yttrium silicide on (111) silicon by vacuum annealing. Applied Physics Letters, 51 (5). 311-313 doi:10.1063/1.98453
In(1987, August) Applied Physics Letters Vol. 51 (5) AIP Publishing

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Gurvitch, M., Manchanda, L., Gibson, J. M. (1987) Study of thermally oxidized yttrium films on silicon. Applied Physics Letters, 51 (12). 919-921 doi:10.1063/1.98801
Flohr, Th., Schulz, M., Tung, R. T. (1987) Infrared absorption of epitaxial NiSi2layers on Si(111). Applied Physics Letters, 51 (17). 1343-1345 doi:10.1063/1.98673
Feldman, R. D., Nakahara, S., Austin, R. F., Boone, T., Opila, R. L., Wynn, A. S. (1987) Defects in (111) HgTe grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1239-1241 doi:10.1063/1.98742
Batstone, J. L., Gibson, J. M., Tung, R. T., Levi, A. F. J. (1988) ‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films. Applied Physics Letters, 52 (10). 828-830 doi:10.1063/1.99297
Hoyt, J. L., Crabbé, E., Gibbons, J. F., Pease, R. F. W. (1987) Epitaxial alignment of arsenic implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing. Applied Physics Letters, 50 (12). 751-753 doi:10.1063/1.98034
Hoyt, J. L., Crabbé, E., Gibbons, J. F., Pease, R. F. W. (1987) Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)]. Applied Physics Letters, 50 (25). 1846 doi:10.1063/1.98271
Siegal, Michael P., Kaatz, Forrest H., Graham, William R., Santiago, Jorge J., Van der Spiegel, Jan (1989) Formation of epitaxial yttrium silicide on (111) silicon. Journal of Applied Physics, 66 (7). 2999-3006 doi:10.1063/1.344184
Tung, R. T., Gibson, J. M., Poate, J. M. (1983) Growth of single crystal epitaxial silicides on silicon by the use of template layers. Applied Physics Letters, 42 (10). 888-890 doi:10.1063/1.93776
Siegal, Michelle F., Martínez‐Miranda, L. J., Santiago‐Avilés, J. J., Graham, W. R., Siegal, M. P. (1994) A study of strain in thin epitaxial films of yttrium silicide on Si(111). Journal of Applied Physics, 75 (3). 1517-1520 doi:10.1063/1.356387
Hu, S. M. (1987) Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays. Applied Physics Letters, 51 (5). 308-310 doi:10.1063/1.98452
Tung, R. T., Levi, A. F. J., Gibson, J. M. (1986) Control of a natural permeable CoSi2base transistor. Applied Physics Letters, 48 (10). 635-637 doi:10.1063/1.96728
 
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