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Feldman, R. D., Nakahara, S., Austin, R. F., Boone, T., Opila, R. L., Wynn, A. S. (1987) Defects in (111) HgTe grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1239-1241 doi:10.1063/1.98742

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Reference TypeJournal (article/letter/editorial)
TitleDefects in (111) HgTe grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsFeldman, R. D.Author
Nakahara, S.Author
Austin, R. F.Author
Boone, T.Author
Opila, R. L.Author
Wynn, A. S.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98742Search in ResearchGate
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Mindat Ref. ID8481194Long-form Identifiermindat:1:5:8481194:1
GUID0
Full ReferenceFeldman, R. D., Nakahara, S., Austin, R. F., Boone, T., Opila, R. L., Wynn, A. S. (1987) Defects in (111) HgTe grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1239-1241 doi:10.1063/1.98742
Plain TextFeldman, R. D., Nakahara, S., Austin, R. F., Boone, T., Opila, R. L., Wynn, A. S. (1987) Defects in (111) HgTe grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1239-1241 doi:10.1063/1.98742
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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Feldman, R.D., Nakahara, S., Opila, R.L., Austin, R.F., Boone, T. (1989) Origin of defects in (111) HgTe grown by molecular beam epitaxy. Journal of Crystal Growth, 98 (4). 581-589 doi:10.1016/0022-0248(89)90294-7
Feldman, R. D., Oron, M., Austin, R. F., Opila, R. L. (1988) Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy. Journal of Applied Physics, 63 (8). 2872-2874 doi:10.1063/1.340944
Feldman, R. D., Austin, R. F., Dayem, A. H., Westerwick, E. H. (1986) Growth of Cd1−xZnxTe by molecular beam epitaxy. Applied Physics Letters, 49 (13). 797-799 doi:10.1063/1.97550
Haakenaasen, R., Selvig, E., Foss, S., Trosdahl-Iversen, L., Taftø, J. (2008) Segmented nanowires of HgTe and Te grown by molecular beam epitaxy. Applied Physics Letters, 92 (13). 133108pp. doi:10.1063/1.2898166
Kaplar, R. J., Ringel, S. A., Kurtz, Steven R., Klem, J. F., Allerman, A. A. (2002) Deep-level defects in InGaAsN grown by molecular-beam epitaxy. Applied Physics Letters, 80 (25). 4777-4779 doi:10.1063/1.1483912
Reisinger, A. R., Harris, K. A., Myers, T. H., Yanka, R. W., Mohnkern, L. M., Hoffman, C. A. (1992) Carrier lifetime in HgTe/CdTe superlattices grown by photoassisted molecular beam epitaxy. Applied Physics Letters, 61 (6). 699-701 doi:10.1063/1.107826
Hanlon, T. R., Koestner, R. J., Liu, H.‐Y. (1989) Misfit accommodation in a lattice‐mismatched HgTe‐CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 55 (15). 1513-1515 doi:10.1063/1.101592
Justice, R. J., Seiler, D. G., Zawadzki, W., Koestner, R. J., Goodwin, M. W. (1988) Two‐dimensional behavior of molecular beam epitaxy grown HgTe. Applied Physics Letters, 52 (16). 1332-1334 doi:10.1063/1.99150
Kopf, R. F., Schubert, E. F., Harris, T. D., Becker, R. S. (1991) Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptions. Applied Physics Letters, 58 (6). 631-633 doi:10.1063/1.104551
Gurvitch, M., Levi, A. F. J., Tung, R. T., Nakahara, S. (1987) Epitaxial yttrium silicide on (111) silicon by vacuum annealing. Applied Physics Letters, 51 (5). 311-313 doi:10.1063/1.98453
Myers, D. R., Dawson, L. R., Klem, J. F., Brennan, T. M., Hammons, B. E., Simons, D. S., Comas, J., Pellegrino, J. (1990) Unintentional indium incorporation in GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (22). 2321-2323 doi:10.1063/1.103881
 
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