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Justice, R. J., Seiler, D. G., Zawadzki, W., Koestner, R. J., Goodwin, M. W. (1988) Two‐dimensional behavior of molecular beam epitaxy grown HgTe. Applied Physics Letters, 52 (16). 1332-1334 doi:10.1063/1.99150

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Reference TypeJournal (article/letter/editorial)
TitleTwo‐dimensional behavior of molecular beam epitaxy grown HgTe
JournalApplied Physics Letters
AuthorsJustice, R. J.Author
Seiler, D. G.Author
Zawadzki, W.Author
Koestner, R. J.Author
Goodwin, M. W.Author
Year1988 (April 18)Volume52
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99150Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482797Long-form Identifiermindat:1:5:8482797:9
GUID0
Full ReferenceJustice, R. J., Seiler, D. G., Zawadzki, W., Koestner, R. J., Goodwin, M. W. (1988) Two‐dimensional behavior of molecular beam epitaxy grown HgTe. Applied Physics Letters, 52 (16). 1332-1334 doi:10.1063/1.99150
Plain TextJustice, R. J., Seiler, D. G., Zawadzki, W., Koestner, R. J., Goodwin, M. W. (1988) Two‐dimensional behavior of molecular beam epitaxy grown HgTe. Applied Physics Letters, 52 (16). 1332-1334 doi:10.1063/1.99150
In(1988, April) Applied Physics Letters Vol. 52 (16) AIP Publishing

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Seiler, D. G., Ward, G. B., Justice, R. J., Koestner, R. J., Goodwin, M. W., Kinch, M. A., Meyer, J. R. (1989) Shubnikov–de Haas measurements onn‐ andp‐type HgTe‐CdTe superlattices. Journal of Applied Physics, 66 (1). 303-307 doi:10.1063/1.343873
Hanlon, T. R., Koestner, R. J., Liu, H.‐Y. (1989) Misfit accommodation in a lattice‐mismatched HgTe‐CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 55 (15). 1513-1515 doi:10.1063/1.101592
Reed, M. A., Koestner, R. J., Goodwin, M. W. (1986) Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure. Applied Physics Letters, 49 (19). 1293-1295 doi:10.1063/1.97390
Arias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310
Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C. (1988) Laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 52 (13). 1065-1067 doi:10.1063/1.99212
Feldman, R. D., Oron, M., Austin, R. F., Opila, R. L. (1988) Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy. Journal of Applied Physics, 63 (8). 2872-2874 doi:10.1063/1.340944
Feldman, R. D., Nakahara, S., Austin, R. F., Boone, T., Opila, R. L., Wynn, A. S. (1987) Defects in (111) HgTe grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1239-1241 doi:10.1063/1.98742
Tsen, G. K. O., Musca, C. A., Dell, J. M., Antoszewski, J., Faraone, L., Becker, C. R. (2008) Arsenic δ-doped HgTe∕HgCdTe superlattices grown by molecular beam epitaxy. Applied Physics Letters, 92 (8). 82107pp. doi:10.1063/1.2888967
Seiler, D. G., McClure, S. W., Justice, R. J., Loloee, M. R., Nelson, D. A. (1986) Nonlinear optical determination of the energy gap of Hg1−xCdxTe using two‐photon absorption techniques. Applied Physics Letters, 48 (17). 1159-1161 doi:10.1063/1.96456
Ballingall, J. M., Leopold, D. J., Wroge, M. L., Peterman, D. J., Morris, B. J., Broerman, J. G. (1986) HgTe‐CdTe superlattices grown on GaAs (100) oriented substrates by molecular beam epitaxy. Applied Physics Letters, 49 (14). 871-873 doi:10.1063/1.97520
Skierbiszewski, C., Dybko, K., Knap, W., Siekacz, M., Krupczyński, W., Nowak, G., Boćkowski, M., Łusakowski, J., Wasilewski, Z. R., Maude, D., Suski, T., Porowski, S. (2005) High mobility two-dimensional electron gas in AlGaN∕GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy. Applied Physics Letters, 86 (10). 102106pp. doi:10.1063/1.1873056
 
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