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Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C. (1988) Laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 52 (13). 1065-1067 doi:10.1063/1.99212

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Reference TypeJournal (article/letter/editorial)
TitleLaser‐assisted metalorganic molecular beam epitaxy of GaAs
JournalApplied Physics Letters
AuthorsDonnelly, V. M.Author
Tu, C. W.Author
Beggy, J. C.Author
McCrary, V. R.Author
Lamont, M. G.Author
Harris, T. D.Author
Baiocchi, F. A.Author
Farrow, R. C.Author
Year1988 (March 28)Volume52
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.99212Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482624Long-form Identifiermindat:1:5:8482624:4
GUID0
Full ReferenceDonnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C. (1988) Laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 52 (13). 1065-1067 doi:10.1063/1.99212
Plain TextDonnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Lamont, M. G., Harris, T. D., Baiocchi, F. A., Farrow, R. C. (1988) Laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 52 (13). 1065-1067 doi:10.1063/1.99212
In(1988, March) Applied Physics Letters Vol. 52 (13) AIP Publishing

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Tu, C. W., Donnelly, V. M., Beggy, J. C., Baiocchi, F. A., McCrary, V. R., Harris, T. D., Lamont, M. G. (1988) Laser‐modified molecular beam epitaxial growth of (Al)GaAs on GaAs and (Ca,Sr)F2/GaAs substrates. Applied Physics Letters, 52 (12). 966-968 doi:10.1063/1.99243
Tu, C.W., Donnelly, V.M., Beggy, J.C., McCrary, V.R., McCaulley, J.A. (1989) Selective-area epitaxy of GaAs by Molecular-Beam Epitaxy (MBE) and metalorganic MBE with excimer laser irradiation. Journal of Crystal Growth, 95 (1). 140-141 doi:10.1016/0022-0248(89)90367-9
Williams, G. M., Whitehouse, C. R., McConville, C. F., Cullis, A. G., Ashley, T., Courtney, S. J., Elliott, C. T. (1988) Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy. Applied Physics Letters, 53 (13). 1189-1191 doi:10.1063/1.100405
Sugiura, H., Iga, R., Yamada, T., Yamaguchi, M. (1989) Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs. Applied Physics Letters, 54 (4). 335-337 doi:10.1063/1.100962
Skolnick, M. S., Harris, T. D., Tu, C. W., Brennan, T. M., Sturge, M. D. (1985) Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy. Applied Physics Letters, 46 (4). 427-429 doi:10.1063/1.95601
Shi, B. Q., Tu, C. W. (2000) A study of Ar+ laser-assisted Si doping of GaAs by chemical beam epitaxy. Applied Physics Letters, 76 (13). 1716-1718 doi:10.1063/1.126145
Abernathy, C. R., Wisk, P. W., Bohling, D. A., Muhr, G. T. (1992) Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic. Applied Physics Letters, 60 (19). 2421-2423 doi:10.1063/1.106992
Chand, Naresh, Miller, R. C., Sergent, A. M., Sputz, S. K., Lang, D. V. (1988) Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy. Applied Physics Letters, 52 (20). 1721-1723 doi:10.1063/1.99028
Kwo, J., Hong, M., Trevor, D. J., Fleming, R. M., White, A. E., Farrow, R. C., Kortan, A. R., Short, K. T. (1988) Insituepitaxial growth of Y1Ba2Cu3O7−xfilms by molecular beam epitaxy with an activated oxygen source. Applied Physics Letters, 53 (26). 2683-2685 doi:10.1063/1.100545
Donnelly, V. M., McCrary, V. R., Appelbaum, A., Brasen, D., Lowe, W. P. (1987) ArF excimer‐laser‐stimulated growth of polycrystalline GaAs thin films. Journal of Applied Physics, 61 (4). 1410-1414 doi:10.1063/1.338120
Studtmann, G. D., Gunshor, R. L., Kolodziejski, L. A., Melloch, M. R., Cooper, J. A., Pierret, R. F., Munich, D. P., Choi, C., Otsuka, N. (1988) Pseudomorphic ZnSe/n‐GaAs doped‐channel field‐effect transistors by interrupted molecular beam epitaxy. Applied Physics Letters, 52 (15). 1249-1251 doi:10.1063/1.99171
 
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