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Arias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310

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Reference TypeJournal (article/letter/editorial)
TitleInfrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsArias, J. M.Author
Shin, S. H.Author
Pasko, J. G.Author
Gertner, E. R.Author
Year1988 (January 4)Volume52
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.99310Search in ResearchGate
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Mindat Ref. ID8482370Long-form Identifiermindat:1:5:8482370:6
GUID0
Full ReferenceArias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310
Plain TextArias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310
In(1988, January) Applied Physics Letters Vol. 52 (1) AIP Publishing

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Arias, J. M., Shin, S. H., Pasko, J. G., DeWames, R. E., Gertner, E. R. (1989) Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy. Journal of Applied Physics, 65 (4). 1747-1753 doi:10.1063/1.342925
Arias, J. M., DeWames, R. E., Shin, S. H., Pasko, J. G., Chen, J. S., Gertner, E. R. (1989) Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 54 (11). 1025-1027 doi:10.1063/1.100787
Arias, J. M., Zandian, M., Williams, G. M., Blazejewski, E. R., DeWames, R. E., Pasko, J. G. (1991) HgCdTe dual‐band infrared photodiodes grown by molecular beam epitaxy. Journal of Applied Physics, 70 (8). 4620-4622 doi:10.1063/1.349099
Faurie, J. P., Sivananthan, S., Lange, M., Dewames, R. E., Vandewyck, A. M. B., Williams, G. M., Yamini, Dan, Yao, E. (1988) Characteristics ofp‐njunctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 52 (25). 2151-2153 doi:10.1063/1.99561
Shin, S. H., Gertner, E. R., Pasko, J. G., Tennant, W. E. (1985) Isothermal vapor‐phase epitaxy of Hg1−xCdxTe on CdTe and Al2O3substrates. Journal of Applied Physics, 57 (10). 4721-4726 doi:10.1063/1.335334
Zandian, M., Chen, A. C., Edwall, D. D., Pasko, J. G., Arias, J. M. (1997) p-type arsenic doping of Hg1−xCdxTe by molecular beam epitaxy. Applied Physics Letters, 71 (19). 2815-2817 doi:10.1063/1.120144
Shin, S. H., Pasko, J. G. (1984) Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe. Applied Physics Letters, 44 (4). 423-425 doi:10.1063/1.94796
Dhar, N. K., Zandian, M., Pasko, J. G., Arias, J. M., Dinan, J. H. (1997) Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy. Applied Physics Letters, 70 (13). 1730-1732 doi:10.1063/1.118683
Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., Bajaj, J., DeWames, R. E. (1992) Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy. Applied Physics Letters, 61 (10). 1196-1198 doi:10.1063/1.107592
Arias, J. M., Zandian, M., Zucca, R., DeWames, R. E. (1991) p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy. Applied Physics Letters, 58 (24). 2806-2808 doi:10.1063/1.104742
Zandian, M., Arias, J. M., Zucca, R., Gil, R. V., Shin, S. H. (1991) HgCdTe double heterostructure injection laser grown by molecular beam epitaxy. Applied Physics Letters, 59 (9). 1022-1024 doi:10.1063/1.106332
 
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