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Arias, J. M., DeWames, R. E., Shin, S. H., Pasko, J. G., Chen, J. S., Gertner, E. R. (1989) Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 54 (11). 1025-1027 doi:10.1063/1.100787

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Reference TypeJournal (article/letter/editorial)
TitleInfrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates
JournalApplied Physics Letters
AuthorsArias, J. M.Author
DeWames, R. E.Author
Shin, S. H.Author
Pasko, J. G.Author
Chen, J. S.Author
Gertner, E. R.Author
Year1989 (March 13)Volume54
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100787Search in ResearchGate
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Mindat Ref. ID8485963Long-form Identifiermindat:1:5:8485963:1
GUID0
Full ReferenceArias, J. M., DeWames, R. E., Shin, S. H., Pasko, J. G., Chen, J. S., Gertner, E. R. (1989) Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 54 (11). 1025-1027 doi:10.1063/1.100787
Plain TextArias, J. M., DeWames, R. E., Shin, S. H., Pasko, J. G., Chen, J. S., Gertner, E. R. (1989) Infrared diodes fabricated with HgCdTe grown by molecular beam epitaxy on GaAs substrates. Applied Physics Letters, 54 (11). 1025-1027 doi:10.1063/1.100787
In(1989, March) Applied Physics Letters Vol. 54 (11) AIP Publishing

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Arias, J. M., Shin, S. H., Pasko, J. G., DeWames, R. E., Gertner, E. R. (1989) Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy. Journal of Applied Physics, 65 (4). 1747-1753 doi:10.1063/1.342925
Arias, J. M., Shin, S. H., Pasko, J. G., Gertner, E. R. (1988) Infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular beam epitaxy. Applied Physics Letters, 52 (1). 39-41 doi:10.1063/1.99310
Arias, J. M., Zandian, M., Williams, G. M., Blazejewski, E. R., DeWames, R. E., Pasko, J. G. (1991) HgCdTe dual‐band infrared photodiodes grown by molecular beam epitaxy. Journal of Applied Physics, 70 (8). 4620-4622 doi:10.1063/1.349099
Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., DeWames, R. E. (1991) Effect of the dislocation density on minority‐carrier lifetime in molecular beam epitaxial HgCdTe. Applied Physics Letters, 59 (21). 2718-2720 doi:10.1063/1.105895
Shin, S. H., Arias, J. M., Zandian, M., Pasko, J. G., Bajaj, J., DeWames, R. E. (1992) Minority carrier lifetime and diffusion length in HgTe/CdTe superlattices by molecular beam epitaxy. Applied Physics Letters, 61 (10). 1196-1198 doi:10.1063/1.107592
Arias, Jose, Zandian, M., Pasko, J. G., Shin, S. H., Bubulac, L. O., DeWames, R. E., Tennant, W. E. (1991) Molecular‐beam epitaxy growth andinsituarsenic doping ofp‐on‐nHgCdTe heterojunctions. Journal of Applied Physics, 69 (4). 2143-2148 doi:10.1063/1.348741
Dhar, N. K., Zandian, M., Pasko, J. G., Arias, J. M., Dinan, J. H. (1997) Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy. Applied Physics Letters, 70 (13). 1730-1732 doi:10.1063/1.118683
Zandian, M., Arias, J. M., Zucca, R., Gil, R. V., Shin, S. H. (1991) HgCdTe double heterostructure injection laser grown by molecular beam epitaxy. Applied Physics Letters, 59 (9). 1022-1024 doi:10.1063/1.106332
Arias, J. M., Zandian, M., Zucca, R., DeWames, R. E. (1991) p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy. Applied Physics Letters, 58 (24). 2806-2808 doi:10.1063/1.104742
Arias, J. M., Pasko, J. G., Zandian, M., Shin, S. H., Williams, G. M., Bubulac, L. O., DeWames, R. E., Tennant, W. E. (1993) Planarp‐on‐nHgCdTe heterostructure photovoltaic detectors. Applied Physics Letters, 62 (9). 976-978 doi:10.1063/1.108538
Faurie, J. P., Sivananthan, S., Lange, M., Dewames, R. E., Vandewyck, A. M. B., Williams, G. M., Yamini, Dan, Yao, E. (1988) Characteristics ofp‐njunctions fabricated on Hg1−xCdxTe epilayers grown by molecular beam epitaxy. Applied Physics Letters, 52 (25). 2151-2153 doi:10.1063/1.99561
 
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