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Miller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J. (1986) High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 49 (20). 1384-1386 doi:10.1063/1.97625

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Reference TypeJournal (article/letter/editorial)
TitleHigh quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsMiller, B. I.Author
Schubert, E. F.Author
Koren, U.Author
Ourmazd, A.Author
Dayem, A. H.Author
Capik, R. J.Author
Year1986 (November 17)Volume49
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.97625Search in ResearchGate
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Mindat Ref. ID8478863Long-form Identifiermindat:1:5:8478863:4
GUID0
Full ReferenceMiller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J. (1986) High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 49 (20). 1384-1386 doi:10.1063/1.97625
Plain TextMiller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J. (1986) High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 49 (20). 1384-1386 doi:10.1063/1.97625
In(1986, November) Applied Physics Letters Vol. 49 (20) AIP Publishing

See Also

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Miller, B. I., Koren, U., Capik, R. J., Su, Y. K. (1987) InGaAsP/InP high‐power semi‐insulating blocked planar buried‐heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 51 (26). 2260-2262 doi:10.1063/1.98903
Bar‐Joseph, I., Klingshirn, C., Miller, D. A. B., Chemla, D. S., Koren, U., Miller, B. I. (1987) Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 50 (15). 1010-1012 doi:10.1063/1.97991
Tsang, W. T., Schubert, E. F. (1986) Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy. Applied Physics Letters, 49 (4). 220-222 doi:10.1063/1.97177
Miller, B. I., Young, M. G., Oron, M., Koren, U., Kisker, D. (1990) High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine. Applied Physics Letters, 56 (15). 1439-1441 doi:10.1063/1.102491
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Koren, U., Miller, B. I., Koch, T. L., Boyd, G. D., Capik, R. J., Soccolich, C. E. (1986) Low loss InGaAs/InP multiple quantum well waveguides. Applied Physics Letters, 49 (23). 1602-1604 doi:10.1063/1.97293
Wang, T. Y., Jen, H. R., Chen, G. S., Stringfellow, G. B. (1990) Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy. Journal of Applied Physics, 67 (1). 563-566 doi:10.1063/1.345193
Wang, T. Y., Reihlen, E. H., Jen, H. R., Stringfellow, G. B. (1989) Systematic studies on the effect of growth interruptions for GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy. Journal of Applied Physics, 66 (11). 5376-5383 doi:10.1063/1.343681
Carey, K. W., Hull, R., Fouquet, J. E., Kellert, F. G., Trott, G. R. (1987) Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (12). 910-912 doi:10.1063/1.98798
Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
Grützmacher, D., Wolter, K., Jürgensen, H., Balk, P., Bulle Lieuwma, C. W. T. (1988) Optical properties of very narrow GaInAs/InP quantum wells grown by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 52 (11). 872-873 doi:10.1063/1.99258
 
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