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Miller, B. I., Young, M. G., Oron, M., Koren, U., Kisker, D. (1990) High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine. Applied Physics Letters, 56 (15). 1439-1441 doi:10.1063/1.102491

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Reference TypeJournal (article/letter/editorial)
TitleHigh quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine
JournalApplied Physics Letters
AuthorsMiller, B. I.Author
Young, M. G.Author
Oron, M.Author
Koren, U.Author
Kisker, D.Author
Year1990 (April 9)Volume56
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.102491Search in ResearchGate
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Mindat Ref. ID8489947Long-form Identifiermindat:1:5:8489947:1
GUID0
Full ReferenceMiller, B. I., Young, M. G., Oron, M., Koren, U., Kisker, D. (1990) High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine. Applied Physics Letters, 56 (15). 1439-1441 doi:10.1063/1.102491
Plain TextMiller, B. I., Young, M. G., Oron, M., Koren, U., Kisker, D. (1990) High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine. Applied Physics Letters, 56 (15). 1439-1441 doi:10.1063/1.102491
In(1990, April) Applied Physics Letters Vol. 56 (15) AIP Publishing

See Also

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Miller, B. I., Koren, U., Capik, R. J., Su, Y. K. (1987) InGaAsP/InP high‐power semi‐insulating blocked planar buried‐heterostructure lasers grown entirely by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 51 (26). 2260-2262 doi:10.1063/1.98903
Miller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J. (1986) High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 49 (20). 1384-1386 doi:10.1063/1.97625
Bar‐Joseph, I., Klingshirn, C., Miller, D. A. B., Chemla, D. S., Koren, U., Miller, B. I. (1987) Quantum‐confined Stark effect in InGaAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 50 (15). 1010-1012 doi:10.1063/1.97991
Koren, U., Miller, B. I., Raybon, G., Oron, M., Young, M. G., Koch, T. L., DeMiguel, J. L., Chien, M., Tell, B., Brown‐Goebeler, K., Burrus, C. A. (1990) Integration of 1.3 μm wavelength lasers and optical amplifiers. Applied Physics Letters, 57 (14). 1375-1377 doi:10.1063/1.103440
Miller, B. I., Koren, U., Young, M. G., Chien, M. D. (1991) Strain‐compensated strained‐layer superlattices for 1.5 μm wavelength lasers. Applied Physics Letters, 58 (18). 1952-1954 doi:10.1063/1.105029
Cherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517
Chen, G. S., Wang, T. Y., Stringfellow, G. B. (1990) Transmission electron microscope characterization of AlGaInP grown by organometallic vapor phase epitaxy. Applied Physics Letters, 56 (15). 1463-1465 doi:10.1063/1.102499
Abdalla, M. I., Kenneson, D. G., Powazinik, W., Koteles, E. S. (1990) Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine. Applied Physics Letters, 57 (5). 494-496 doi:10.1063/1.103631
Williams, D. M., Wessels, B. W. (1990) Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor. Applied Physics Letters, 56 (6). 566-568 doi:10.1063/1.102746
Shani, Y., Alferness, R., Koch, T., Koren, U., Oron, M., Miller, B. I., Young, M. G. (1991) Polarization rotation in asymmetric periodic loaded rib waveguides. Applied Physics Letters, 59 (11). 1278-1280 doi:10.1063/1.105474
Aina, Leye, Mattingly, Mike (1987) High‐quality InAlAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (20). 1637-1639 doi:10.1063/1.98580
 
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