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Klem, J., Huang, D., Morkoç, H., Ihm, Y. E., Otsuka, N. (1987) Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP. Applied Physics Letters, 50 (19). 1364-1366 doi:10.1063/1.97857

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP
JournalApplied Physics Letters
AuthorsKlem, J.Author
Huang, D.Author
Morkoç, H.Author
Ihm, Y. E.Author
Otsuka, N.Author
Year1987 (May 11)Volume50
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97857Search in ResearchGate
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Mindat Ref. ID8480004Long-form Identifiermindat:1:5:8480004:2
GUID0
Full ReferenceKlem, J., Huang, D., Morkoç, H., Ihm, Y. E., Otsuka, N. (1987) Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP. Applied Physics Letters, 50 (19). 1364-1366 doi:10.1063/1.97857
Plain TextKlem, J., Huang, D., Morkoç, H., Ihm, Y. E., Otsuka, N. (1987) Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP. Applied Physics Letters, 50 (19). 1364-1366 doi:10.1063/1.97857
In(1987, May) Applied Physics Letters Vol. 50 (19) AIP Publishing

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Ihm, Yeong‐Eon, Otsuka, N., Klem, J., Morkoç, H. (1987) Ordering in GaAs1−xSbxgrown by molecular beam epitaxy. Applied Physics Letters, 51 (24). 2013-2015 doi:10.1063/1.98277
Otsuka, N., Ihm, Y.E., Hirotsu, Y., Klem, J., Morkoç, H. (1989) Atomic ordering in GaAs0.5Sb0.5 grown by molecular beam epitaxy. Journal of Crystal Growth, 95 (1). 43-47 doi:10.1016/0022-0248(89)90347-3
Chyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784
Klem, J., Peng, C. K., Henderson, T., Morkoç, H., Otsuka, N., Choi, C., Yu, P. W. (1985) GaAs/GaAs1−ySbystrained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 885-887 doi:10.1063/1.95965
Huang, D., Chyi, J., Klem, J., Morkoç, Hadis (1988) Optical properties of molecular beam epitaxially grown GaAs1−xSbx(0Journal of Applied Physics, 63 (12). 5859-5862 doi:10.1063/1.340274
Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkoç, H., Hafich, M., Wang, P. D., Robinson, G. Y. (1984) Optical properties of GaAs on (100) Si using molecular beam epitaxy. Applied Physics Letters, 45 (12). 1309-1311 doi:10.1063/1.95130
Cunningham, J. E., Tsang, W. T., Chiu, T. H., Schubert, E. F. (1987) Molecular beam epitaxial growth of high‐purity AlGaAs. Applied Physics Letters, 50 (12). 769-771 doi:10.1063/1.98040
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Chand, N., Klem, J., Morkoç, H. (1986) PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors. Applied Physics Letters, 48 (7). 484-486 doi:10.1063/1.96483
Chiang, T. Y., Yiin, D. H., Liu, E. H., Yew, T. R. (1993) Low‐temperature (490 °C)GaAs epitaxial growth on (100)Si by molecular beam epitaxy. Applied Physics Letters, 62 (9). 985-987 doi:10.1063/1.108508
Adomi, K., Strite, S., Morkoç, H., Nakamura, Y., Otsuka, N. (1991) Characterization of GaAs grown on Si epitaxial layers on GaAs substrates. Journal of Applied Physics, 69 (1). 220-225 doi:10.1063/1.347754
 
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