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Chyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxial growth and characterization of InSb on Si
JournalApplied Physics Letters
AuthorsChyi, J.‐I.Author
Biswas, D.Author
Iyer, S. V.Author
Kumar, N. S.Author
Morkoç, H.Author
Bean, R.Author
Zanio, K.Author
Lee, H.‐Y.Author
Chen, HaydnAuthor
Year1989 (March 13)Volume54
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.100784Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8485958Long-form Identifiermindat:1:5:8485958:9
GUID0
Full ReferenceChyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784
Plain TextChyi, J.‐I., Biswas, D., Iyer, S. V., Kumar, N. S., Morkoç, H., Bean, R., Zanio, K., Lee, H.‐Y., Chen, Haydn (1989) Molecular beam epitaxial growth and characterization of InSb on Si. Applied Physics Letters, 54 (11). 1016-1018 doi:10.1063/1.100784
In(1989, March) Applied Physics Letters Vol. 54 (11) AIP Publishing

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Chyi, J.‐I., Kalem, S., Kumar, N. S., Litton, C. W., Morkoç, H. (1988) Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy. Applied Physics Letters, 53 (12). 1092-1094 doi:10.1063/1.100031
Xie, Y. H., Luftman, H. S., Lopata, J., Bean, J. C. (1989) Hydrogenation of molecular beam epitaxial Ge0.36Si0.64on Si. Applied Physics Letters, 55 (7). 684-686 doi:10.1063/1.101821
Klem, J., Huang, D., Morkoç, H., Ihm, Y. E., Otsuka, N. (1987) Molecular beam epitaxial growth and low‐temperature optical characterization of GaAs0.5Sb0.5on InP. Applied Physics Letters, 50 (19). 1364-1366 doi:10.1063/1.97857
Kalem, Seref, Chyi, Jen‐Inn, Morkoç, Hadis, Bean, Ross, Zanio, Ken (1988) Growth and transport properties of InAs epilayers on GaAs. Applied Physics Letters, 53 (17). 1647-1649 doi:10.1063/1.99938
Samarth, N., Luo, H., Furdyna, J. K., Qadri, S. B., Lee, Y. R., Ramdas, A. K., Otsuka, N. (1989) Growth of cubic (zinc blende) CdSe by molecular beam epitaxy. Applied Physics Letters, 54 (26). 2680-2682 doi:10.1063/1.101033
Chyi, J.‐I., Chen, J., Kumar, N. S., Kiely, C., Peng, C. K., Rockett, A., Morkoç, H. (1989) Low‐resistance nonalloyed ohmic contacts onp‐type GaAs using GaSb/GaAs strained‐layer superlattices. Applied Physics Letters, 55 (6). 570-571 doi:10.1063/1.101835
Oh, J. E., Bhattacharya, P. K., Chen, Y. C., Tsukamoto, S. (1989) Molecular‐beam epitaxial growth of high‐quality InSb on InP and GaAs substrates. Journal of Applied Physics, 66 (8). 3618-3621 doi:10.1063/1.344069
Mohammad, S. Noor, Chen, J., Chyi, J.‐I., Morkoç, H. (1991) Effect of junction and band‐gap grading on the electrical performance of molecular beam epitaxial grown AlGaAs/GaAs/AlGaAs double‐heterojunction bipolar transistors. Journal of Applied Physics, 69 (2). 1067-1070 doi:10.1063/1.347373
Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
Pukite, P. R., Iyer, S. S., Scilla, G. J. (1989) Ion beam enhanced diffusion of B during Si molecular beam epitaxy. Applied Physics Letters, 54 (10). 916-918 doi:10.1063/1.100807
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
 
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