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Tsang, W. T., Chiu, T. H., Cunningham, J. E., Robertson, A. (1987) Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy. Applied Physics Letters, 50 (19). 1376-1378 doi:10.1063/1.97861

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Reference TypeJournal (article/letter/editorial)
TitleObservations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
JournalApplied Physics Letters
AuthorsTsang, W. T.Author
Chiu, T. H.Author
Cunningham, J. E.Author
Robertson, A.Author
Year1987 (May 11)Volume50
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97861Search in ResearchGate
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Mindat Ref. ID8480012Long-form Identifiermindat:1:5:8480012:1
GUID0
Full ReferenceTsang, W. T., Chiu, T. H., Cunningham, J. E., Robertson, A. (1987) Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy. Applied Physics Letters, 50 (19). 1376-1378 doi:10.1063/1.97861
Plain TextTsang, W. T., Chiu, T. H., Cunningham, J. E., Robertson, A. (1987) Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy. Applied Physics Letters, 50 (19). 1376-1378 doi:10.1063/1.97861
In(1987, May) Applied Physics Letters Vol. 50 (19) AIP Publishing

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Chiu, T. H., Tsang, W. T., Cunningham, J. E., Robertson, A. (1987) Gallium‐ and arsenic‐induced oscillations of intensity of reflection high‐energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy. Journal of Applied Physics, 62 (6). 2302-2307 doi:10.1063/1.339489
Koziol, C., Lilienkamp, G., Bauer, E. (1987) Intensity oscillations in reflection high‐energy electron diffraction during molecular beam epitaxy of Ni on W(110). Applied Physics Letters, 51 (12). 901-903 doi:10.1063/1.98795
Shitara, T., Neave, J. H., Joyce, B. A. (1993) Reflection high‐energy electron diffraction intensity oscillations and anisotropy on vicinal AlAs(001) during molecular‐beam epitaxy. Applied Physics Letters, 62 (14). 1658-1660 doi:10.1063/1.108618
Cunningham, J. E., Tsang, W. T., Chiu, T. H., Schubert, E. F. (1987) Molecular beam epitaxial growth of high‐purity AlGaAs. Applied Physics Letters, 50 (12). 769-771 doi:10.1063/1.98040
Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E. (1987) Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy. Applied Physics Letters, 51 (10). 761-763 doi:10.1063/1.98859
Robertson, A., Chiu, T. H., Tsang, W. T., Cunningham, J. E. (1988) A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy. Journal of Applied Physics, 64 (2). 877-887 doi:10.1063/1.342508
Clarke, S., Wilby, M. R., Vvedensky, D. D., Kawamura, T., Sakamoto, T. (1989) Monolayer to bilayer transition in reflection high‐energy electron diffraction intensity oscillations during Si(001) molecular beam epitaxy. Applied Physics Letters, 54 (24). 2417-2418 doi:10.1063/1.101093
Morishita, Yoshitaka, Maruno, Sigemitsu, Gotoda, Mitsunobu, Nomura, Yoshinori, Ogata, Hitoshi (1988) Observations on intensity oscillations in reflection high‐energy electron diffraction during gas source molecular beam epitaxy of InP. Applied Physics Letters, 53 (1). 42-44 doi:10.1063/1.100117
Sakamoto, T., Kawai, N. J., Nakagawa, T., Ohta, K., Kojima, T. (1985) Intensity oscillations of reflection high‐energy electron diffraction during silicon molecular beam epitaxial growth. Applied Physics Letters, 47 (6). 617-619 doi:10.1063/1.96091
Zandvliet, H. J. W., Elswijk, H. B., Dijkkamp, D., van Loenen, E. J., Dieleman, J. (1991) On the period of reflection high‐energy electron diffraction intensity oscillations during Si molecular‐beam epitaxy on vicinal Si(001). Journal of Applied Physics, 70 (5). 2614-2617 doi:10.1063/1.349372
Yen, M. Y., Haas, T. W. (1990) Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates. Applied Physics Letters, 56 (25). 2533-2535 doi:10.1063/1.102878
 
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