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Brillson, L. J., Viturro, R. E., Slade, M. L., Chiaradia, P., Kilday, D., Kelly, M. K., Margaritondo, G. (1987) Near‐ideal Schottky barrier formation at metal‐GaP interfaces. Applied Physics Letters, 50 (19). 1379-1381 doi:10.1063/1.97862

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Reference TypeJournal (article/letter/editorial)
TitleNear‐ideal Schottky barrier formation at metal‐GaP interfaces
JournalApplied Physics Letters
AuthorsBrillson, L. J.Author
Viturro, R. E.Author
Slade, M. L.Author
Chiaradia, P.Author
Kilday, D.Author
Kelly, M. K.Author
Margaritondo, G.Author
Year1987 (May 11)Volume50
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.97862Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8480014Long-form Identifiermindat:1:5:8480014:9
GUID0
Full ReferenceBrillson, L. J., Viturro, R. E., Slade, M. L., Chiaradia, P., Kilday, D., Kelly, M. K., Margaritondo, G. (1987) Near‐ideal Schottky barrier formation at metal‐GaP interfaces. Applied Physics Letters, 50 (19). 1379-1381 doi:10.1063/1.97862
Plain TextBrillson, L. J., Viturro, R. E., Slade, M. L., Chiaradia, P., Kilday, D., Kelly, M. K., Margaritondo, G. (1987) Near‐ideal Schottky barrier formation at metal‐GaP interfaces. Applied Physics Letters, 50 (19). 1379-1381 doi:10.1063/1.97862
In(1987, May) Applied Physics Letters Vol. 50 (19) AIP Publishing

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Brillson, L. J., Slade, M. L., Viturro, R. E., Kelly, M. K., Tache, N., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., Wright, S. L. (1986) Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces. Applied Physics Letters, 48 (21). 1458-1460 doi:10.1063/1.97027
Chiaradia, P., Fanfoni, M., Nataletti, P., De Padova, P., Brillson, L. J., Slade, M. L., Viturro, R. E., Kilday, D., Margaritondo, G. (1989) Fermi-level pinning and intrinsic surface states in cleaved GaP. Physical Review B, 39 (8) 5128-5131 doi:10.1103/physrevb.39.5128
Shaw, J. L., Viturro, R. E., Brillson, L. J., LaGraffe, D. (1988) Chemically controlled deep level formation and band bending at metal‐CdTe interfaces. Applied Physics Letters, 53 (18). 1723-1725 doi:10.1063/1.99806
Brillson, L. J., Brucker, C. F., Katnani, A. D., Stoffel, N. G., Margaritondo, G. (1981) Chemical basis for InP‐metal Schottky‐barrier formation. Applied Physics Letters, 38 (10). 784-786 doi:10.1063/1.92162
Brillson, L. J., Slade, M. L., Katnani, A. D., Kelly, M., Margaritondo, G. (1984) Reduction of silicon‐aluminum interdiffusion by improved semiconductor surface ordering. Applied Physics Letters, 44 (1). 110-112 doi:10.1063/1.94574
Viturro, R. E., Shaw, J. L., Mailhiot, C., Brillson, L. J., Tache, N., McKinley, J., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., Wright, S. L. (1988) Band bending and interface states for metals on GaAs. Applied Physics Letters, 52 (24). 2052-2054 doi:10.1063/1.99578
Cerrina, F., Lai, B., Wells, G. M., Wiley, J. R., Kilday, D. G., Margaritondo, G. (1987) Synchrotron‐radiation‐induced surface nitridation of silicon at room temperature. Applied Physics Letters, 50 (9). 533-534 doi:10.1063/1.98150
Freeouf, J. L., Woodall, J. M., Brillson, L. J., Viturro, R. E. (1990) Metal/(100) GaAs interface: Case for a metal‐insulator‐semiconductor‐like structure. Applied Physics Letters, 56 (1). 69-71 doi:10.1063/1.102654
Chang, S., Brillson, L. J., Kime, Y. J., Rioux, D. S., Kirchner, P. D., Pettit, D., Woodall, J. M. (1990) Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces. Physical Review Letters, 64 (21). 2551-2554 doi:10.1103/physrevlett.64.2551
Margaritondo, G., Stoffel, N. G., Katnani, A. D., Brillson, L. J. (1980) Atomic‐interlayer‐controlled diffusion at semiconductor‐semiconductor interfaces. Applied Physics Letters, 37 (10). 917-918 doi:10.1063/1.91858
Richter, H. W., Brillson, L. J., Kelly, M. K., Daniels, R. R., Margaritondo, G. (1986) Laser‐induced chemical reactions at the Al/III‐V compound semiconductor interface. Journal of Applied Physics, 60 (6). 1994-2002 doi:10.1063/1.337784
 
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