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Shaw, J. L., Viturro, R. E., Brillson, L. J., LaGraffe, D. (1988) Chemically controlled deep level formation and band bending at metal‐CdTe interfaces. Applied Physics Letters, 53 (18). 1723-1725 doi:10.1063/1.99806

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Reference TypeJournal (article/letter/editorial)
TitleChemically controlled deep level formation and band bending at metal‐CdTe interfaces
JournalApplied Physics Letters
AuthorsShaw, J. L.Author
Viturro, R. E.Author
Brillson, L. J.Author
LaGraffe, D.Author
Year1988 (October 31)Volume53
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99806Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484635Long-form Identifiermindat:1:5:8484635:4
GUID0
Full ReferenceShaw, J. L., Viturro, R. E., Brillson, L. J., LaGraffe, D. (1988) Chemically controlled deep level formation and band bending at metal‐CdTe interfaces. Applied Physics Letters, 53 (18). 1723-1725 doi:10.1063/1.99806
Plain TextShaw, J. L., Viturro, R. E., Brillson, L. J., LaGraffe, D. (1988) Chemically controlled deep level formation and band bending at metal‐CdTe interfaces. Applied Physics Letters, 53 (18). 1723-1725 doi:10.1063/1.99806
In(1988, October) Applied Physics Letters Vol. 53 (18) AIP Publishing

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Viturro, R. E., Shaw, J. L., Mailhiot, C., Brillson, L. J., Tache, N., McKinley, J., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., Wright, S. L. (1988) Band bending and interface states for metals on GaAs. Applied Physics Letters, 52 (24). 2052-2054 doi:10.1063/1.99578
Brillson, L. J., Viturro, R. E., Slade, M. L., Chiaradia, P., Kilday, D., Kelly, M. K., Margaritondo, G. (1987) Near‐ideal Schottky barrier formation at metal‐GaP interfaces. Applied Physics Letters, 50 (19). 1379-1381 doi:10.1063/1.97862
Brillson, L. J., Slade, M. L., Viturro, R. E., Kelly, M. K., Tache, N., Margaritondo, G., Woodall, J. M., Kirchner, P. D., Pettit, G. D., Wright, S. L. (1986) Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces. Applied Physics Letters, 48 (21). 1458-1460 doi:10.1063/1.97027
Shaw, J. L., Brillson, L. J., Sivananthan, S., Faurie, J. P. (1990) Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces. Applied Physics Letters, 56 (13). 1266-1268 doi:10.1063/1.102532
Freeouf, J. L., Woodall, J. M., Brillson, L. J., Viturro, R. E. (1990) Metal/(100) GaAs interface: Case for a metal‐insulator‐semiconductor‐like structure. Applied Physics Letters, 56 (1). 69-71 doi:10.1063/1.102654
Mosbacker, H. L., Zgrabik, C., Hetzer, M. J., Swain, A., Look, D. C., Cantwell, G., Zhang, J., Song, J. J., Brillson, L. J. (2007) Thermally driven defect formation and blocking layers at metal-ZnO interfaces. Applied Physics Letters, 91 (7). 72102pp. doi:10.1063/1.2772664
Vitomirov, I. M., Raisanen, A., Finnefrock, A. C., Viturro, R. E., Brillson, L. J., Kirchner, P. D., Pettit, G. D., Woodall, J. M. (1992) Geometric ordering, surface chemistry, band bending, and work function at decapped GaAs(100) surfaces. Physical Review B, 46 (20) 13293-13302 doi:10.1103/physrevb.46.13293
Margaritondo, G., Stoffel, N. G., Katnani, A. D., Brillson, L. J. (1980) Atomic‐interlayer‐controlled diffusion at semiconductor‐semiconductor interfaces. Applied Physics Letters, 37 (10). 917-918 doi:10.1063/1.91858
Balaz, Snjezana, Zeng, Zhaoquan, Brillson, Leonard J. (2013) Heterojunction band offsets and dipole formation at BaTiO3/SrTiO3 interfaces. Journal of Applied Physics, 114 (18). 183701pp. doi:10.1063/1.4829695
Brillson, L.J., Yang, X., Raisanen, A.D., Franciosi, A., Vanzetti, L., Sorba, L. (1998) Deep level formation and heterojunction band offsets at ZnSe/GaAs interfaces. Applied Surface Science, 123. 289-293 doi:10.1016/s0169-4332(97)00452-2
Ettedgui, E., Razafitrimo, H., Gao, Y., Hsieh, B. R. (1995) Band bending modified tunneling at metal/conjugated polymer interfaces. Applied Physics Letters, 67 (18). 2705-2707 doi:10.1063/1.114299
 
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