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Das, Utpal, Zebda, Yousef, Bhattacharya, Pallab, Chin, Albert (1987) Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes. Applied Physics Letters, 51 (15). 1164-1166 doi:10.1063/1.98720

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Reference TypeJournal (article/letter/editorial)
TitlePerformance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes
JournalApplied Physics Letters
AuthorsDas, UtpalAuthor
Zebda, YousefAuthor
Bhattacharya, PallabAuthor
Chin, AlbertAuthor
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98720Search in ResearchGate
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Mindat Ref. ID8481100Long-form Identifiermindat:1:5:8481100:2
GUID0
Full ReferenceDas, Utpal, Zebda, Yousef, Bhattacharya, Pallab, Chin, Albert (1987) Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes. Applied Physics Letters, 51 (15). 1164-1166 doi:10.1063/1.98720
Plain TextDas, Utpal, Zebda, Yousef, Bhattacharya, Pallab, Chin, Albert (1987) Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes. Applied Physics Letters, 51 (15). 1164-1166 doi:10.1063/1.98720
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

See Also

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Das, Utpal, Chen, Yi, Bhattacharya, Pallab (1987) Nonlinear effects in coplanar GaAs/InGaAs strained‐layer superlattice directional couplers. Applied Physics Letters, 51 (21). 1679-1681 doi:10.1063/1.98541
Dhar, Sunanda, Das, Utpal, Bhattacharya, Pallab K. (1986) Deep levels in as‐grown and Si‐implanted In0.2Ga0.8As–GaAs strained‐layer superlattice optical guiding structures. Journal of Applied Physics, 60 (2). 639-642 doi:10.1063/1.337406
Das, Utpal, Bhattacharya, Pallab K. (1985) Variation of refractive index in strained InxGa1−xAs‐GaAs heterostructures. Journal of Applied Physics, 58 (1). 341-344 doi:10.1063/1.335682
Das, Utpal, Chen, Yi, Bhattacharya, Pallab K., Berger, Paul R. (1988) Orientation‐dependent phase modulation in InGaAs/GaAs multiquantum well waveguides. Applied Physics Letters, 53 (22). 2129-2131 doi:10.1063/1.100295
Kothiyal, Govind P., Bhattacharya, Pallab (1988) Optical properties and Stokes shifts in lamp‐annealed InGaAs/GaAs strained layer superlattice. Journal of Applied Physics, 63 (8). 2760-2764 doi:10.1063/1.341132
Li, W. Q., Bhattacharya, P. K., Tober, R. L. (1991) Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy. Applied Physics Letters, 58 (18). 1931-1933 doi:10.1063/1.105049
Chang, Kevin H., Bhattacharya, Pallab K., Gibala, Ronald (1989) Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfaces. Journal of Applied Physics, 66 (7). 2993-2998 doi:10.1063/1.344183
Das, Utpal, Bhattacharya, Pallab K., Dhar, Sunanda (1986) Low‐loss optical waveguides made with molecular beam epitaxial In0.012Ga0.988As and In0.2Ga0.8As‐GaAs superlattices. Applied Physics Letters, 48 (22). 1507-1509 doi:10.1063/1.96902
Chin, Albert, Bhattacharya, Pallab K., Kothiyal, G. P. (1987) Growth of GaAs on SiOxby molecular‐beam epitaxy. Journal of Applied Physics, 62 (4). 1416-1419 doi:10.1063/1.339855
Li, Wei‐Qi, Chin, Albert, Bhattacharya, Pallab, DiVita, S. (1988) Molecular beam epitaxial GaAs optical detectors on silica fibers. Applied Physics Letters, 52 (21). 1768-1770 doi:10.1063/1.99620
Yu, Young‐June, Bosman, Gijs, Bhattacharya, P. K. (1987) Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements. Applied Physics Letters, 51 (18). 1433-1435 doi:10.1063/1.98648
 
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