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(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1987 (October)Volume51
Issue<   15   >
PublisherAIP Publishing
Mindat Ref. ID8481094Long-form Identifiermindat:1:5:8481094:2
GUID0
Full Reference(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing
Plain Text(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 51. AIP Publishing

Contains

Kostenbauder, Adnah G. (1987) High‐speed diffusion‐driven photodetector. Applied Physics Letters, 51 (15). 1129-1131 doi:10.1063/1.98760
Koren, U., Miller, B. I., Koch, T. L., Eisenstein, G., Tucker, R. S., Bar‐Joseph, I., Chemla, D. S. (1987) Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator. Applied Physics Letters, 51 (15). 1132-1134 doi:10.1063/1.98761
Friberg, S. R., Silberberg, Y., Oliver, M. K., Andrejco, M. J., Saifi, M. A., Smith, P. W. (1987) Ultrafast all‐optical switching in a dual‐core fiber nonlinear coupler. Applied Physics Letters, 51 (15). 1135-1137 doi:10.1063/1.98762
Donnelly, J. P., Goodhue, W. D., Windhorn, T. H., Bailey, R. J., Lambert, S. A. (1987) Monolithic two‐dimensional surface‐emitting arrays of GaAs/AlGaAs diode lasers. Applied Physics Letters, 51 (15). 1138-1140 doi:10.1063/1.98763
Olsson, N. A., Henry, C. H., Kazarinov, R. F., Lee, H. J., Johnson, B. H., Orlowsky, K. J. (1987) Narrow linewidth 1.5 Îźm semiconductor laser with a resonant optical reflector. Applied Physics Letters, 51 (15). 1141-1142 doi:10.1063/1.98764
Oya, Gin‐ichiro, Yoshida, Munehiro, Sawada, Yasuji (1987) Growth of α‐Al2O3 films by molecular layer epitaxy. Applied Physics Letters, 51 (15). 1143-1145 doi:10.1063/1.98765
Straley, Christian, Matteson, Abigail, Feng, Sechao, Schwartz, Lawrence M., Kenyon, William E., Banavar, Jayanth R. (1987) Magnetic resonance, digital image analysis, and permeability of porous media. Applied Physics Letters, 51 (15). 1146-1148 doi:10.1063/1.98766
Micheli, F., Boyd, Ian W. (1987) Photon‐controlled oxidation of silicon. Applied Physics Letters, 51 (15). 1149-1151 doi:10.1063/1.98767
Johnson, D. A., Myhajlenko, S., Edwards, J. L., Maracas, G. N., Roedel, R. J., Goronkin, H. (1987) Imaging of deep level domains in semi‐insulating GaAs by voltage contrast. Applied Physics Letters, 51 (15). 1152-1154 doi:10.1063/1.98768
Song, L. W., Benson, B. W., Watkins, G. D. (1987) Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair. Applied Physics Letters, 51 (15). 1155-1157 doi:10.1063/1.98717
Kalish, R., Fastow, R., Richter, V., Shaanan, M. (1987) Rapid annealing of Hg1−xCdxTe by immersion in a hot mercury bath. Applied Physics Letters, 51 (15). 1158-1160 doi:10.1063/1.98718
Adachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719
Das, Utpal, Zebda, Yousef, Bhattacharya, Pallab, Chin, Albert (1987) Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes. Applied Physics Letters, 51 (15). 1164-1166 doi:10.1063/1.98720
Mahan, A. H., Menna, P., Tsu, R. (1987) Influence of microstructure on the Urbach edge of amorphous SiC:H and amorphous SiGe:H alloys. Applied Physics Letters, 51 (15). 1167-1169 doi:10.1063/1.98721
Schubert, E. F., Cunningham, J. E., Tsang, W. T., Timp, G. L. (1987) Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors. Applied Physics Letters, 51 (15). 1170-1172 doi:10.1063/1.98722
Lievin, J.‐L., Fonstad, C. G. (1987) Reflection high‐energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures. Applied Physics Letters, 51 (15). 1173-1175 doi:10.1063/1.98723
Zegenhagen, J., Huang, K.‐G., Hunt, B. D., Schowalter, L. J. (1987) Interface structure and lattice mismatch of epitaxial CoSi2on Si(111). Applied Physics Letters, 51 (15). 1176-1178 doi:10.1063/1.98724
Weimer, R. A., Lenahan, P. M., Marchione, T. A., Brinker, C. J. (1987) Electronic properties of sol‐gel‐derived oxides on silicon. Applied Physics Letters, 51 (15). 1179-1181 doi:10.1063/1.98725
Wen, D. S., Smith, P. L., Osburn, C. M., Rozgonyi, G. A. (1987) Defect annihilation in shallowp+junctions using titanium silicide. Applied Physics Letters, 51 (15). 1182-1184 doi:10.1063/1.98726
Sauer, R., Asom, M., People, R., Lang, D. V., Kimerling, L. C., Bean, J. C. (1987) New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu. Applied Physics Letters, 51 (15). 1185-1187 doi:10.1063/1.98727
Pearton, S. J., Vernon, S. M., Short, K. T., Brown, J. M., Abernathy, C. R., Caruso, R., Chu, S. N. G., Haven, V. E., Bunker, S. N. (1987) Characterization of GaAs grown by metalorganic chemical vapor deposition on Si‐on‐insulator. Applied Physics Letters, 51 (15). 1188-1190 doi:10.1063/1.98728
Webb, C., Weng, S.‐L., Eckstein, J. N., Missert, N., Char, K., Schlom, D. G., Hellman, E. S., Beasley, M. R., Kapitulnik, A., Harris, J. S. (1987) Growth of highTcsuperconducting thin films using molecular beam epitaxy techniques. Applied Physics Letters, 51 (15). 1191-1193 doi:10.1063/1.98729
Lee, S. J., Rippert, E. D., Jin, B. Y., Song, S. N., Hwu, S. J., Poeppelmeier, K., Ketterson, J. B. (1987) Preparation of Y‐Ba‐Cu‐O thin films on MgO by dc magnetron sputtering from a stoichiometric Y1Ba2Cu3O7−δtarget. Applied Physics Letters, 51 (15). 1194-1196 doi:10.1063/1.98730
Lewis, M. R., Wiltshire, M. C. K. (1987) Hybrid aligned cholesteric: A novel liquid‐crystal alignment. Applied Physics Letters, 51 (15). 1197-1199 doi:10.1063/1.98731
Noda, Susumu, Kojima, Keisuke, Mitsunaga, Kazumasa, Kyuma, Kazuo, Hamanaka, Koich, Nakayama, Takashi (1987) Monolithic integration of an AlGaAs/GaAs multiple quantum well distributed feedback laser and a grating coupler for surface emission. Applied Physics Letters, 51 (15). 1200-1202 doi:10.1063/1.98732

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