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Weimer, R. A., Lenahan, P. M., Marchione, T. A., Brinker, C. J. (1987) Electronic properties of sol‐gel‐derived oxides on silicon. Applied Physics Letters, 51 (15). 1179-1181 doi:10.1063/1.98725

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Reference TypeJournal (article/letter/editorial)
TitleElectronic properties of sol‐gel‐derived oxides on silicon
JournalApplied Physics Letters
AuthorsWeimer, R. A.Author
Lenahan, P. M.Author
Marchione, T. A.Author
Brinker, C. J.Author
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98725Search in ResearchGate
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Mindat Ref. ID8481110Long-form Identifiermindat:1:5:8481110:9
GUID0
Full ReferenceWeimer, R. A., Lenahan, P. M., Marchione, T. A., Brinker, C. J. (1987) Electronic properties of sol‐gel‐derived oxides on silicon. Applied Physics Letters, 51 (15). 1179-1181 doi:10.1063/1.98725
Plain TextWeimer, R. A., Lenahan, P. M., Marchione, T. A., Brinker, C. J. (1987) Electronic properties of sol‐gel‐derived oxides on silicon. Applied Physics Letters, 51 (15). 1179-1181 doi:10.1063/1.98725
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

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Warren, W. L., Lenahan, P. M., Brinker, C. J., Ashley, C. S., Reed, S. T., Shaffer, G. R. (1991) Sol‐gel silicate thin‐film electronic properties. Journal of Applied Physics, 69 (8). 4404-4408 doi:10.1063/1.348366
Krick, David T., Lenahan, P. M., Kanicki, J. (1987) Stable photoinduced paramagnetic defects in hydrogenated amorphous silicon nitride. Applied Physics Letters, 51 (8). 608-610 doi:10.1063/1.98362
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Brower, K. L., Lenahan, P. M., Dressendorfer, P. V. (1982) Defects and impurities in thermal oxides on silicon. Applied Physics Letters, 41 (3). 251-253 doi:10.1063/1.93484
Jain, M., Majumder, S. B., Katiyar, R. S., Agrawal, D. C., Bhalla, A. S. (2002) Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites. Applied Physics Letters, 81 (17). 3212-3214 doi:10.1063/1.1515879
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Yablonovitch, E., Sandroff, C. J., Bhat, R., Gmitter, T. (1987) Nearly ideal electronic properties of sulfide coated GaAs surfaces. Applied Physics Letters, 51 (6). 439-441 doi:10.1063/1.98415
Lin, Jen-Po, Wu, Jenn-Ming (2008) The effect of annealing processes on electronic properties of sol-gel derived Al-doped ZnO films. Applied Physics Letters, 92 (13). 134103pp. doi:10.1063/1.2905279
Chaiyasena, I. A., Lenahan, P. M., Dunn, G. J. (1991) Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. Applied Physics Letters, 58 (19). 2141-2143 doi:10.1063/1.104986
Liu, J. M., Chen, L. P., Liu, C. T., Burrus, C. A., Cho, A. Y. (1993) Picosecond response of steady‐state photovoltaic effect in an asymmetrical graded semiconductor superlattice structure. Applied Physics Letters, 62 (11). 1179-1181 doi:10.1063/1.108726
Asom, M. T., Benton, J. L., Sauer, R., Kimerling, L. C. (1987) Interstitial defect reactions in silicon. Applied Physics Letters, 51 (4). 256-258 doi:10.1063/1.98465
 
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