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Witham, H. S., Lenahan, P. M. (1987) Nature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides. Applied Physics Letters, 51 (13). 1007-1009 doi:10.1063/1.98813

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Reference TypeJournal (article/letter/editorial)
TitleNature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides
JournalApplied Physics Letters
AuthorsWitham, H. S.Author
Lenahan, P. M.Author
Year1987 (September 28)Volume51
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.98813Search in ResearchGate
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Mindat Ref. ID8481018Long-form Identifiermindat:1:5:8481018:2
GUID0
Full ReferenceWitham, H. S., Lenahan, P. M. (1987) Nature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides. Applied Physics Letters, 51 (13). 1007-1009 doi:10.1063/1.98813
Plain TextWitham, H. S., Lenahan, P. M. (1987) Nature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides. Applied Physics Letters, 51 (13). 1007-1009 doi:10.1063/1.98813
In(1987, September) Applied Physics Letters Vol. 51 (13) AIP Publishing

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Witham, Howard S., Lenahan, Patrick M. (1987) The Nature of the Deep Hole Trap in MOS Oxides. IEEE Transactions on Nuclear Science, 34 (6) 1147-1151 doi:10.1109/tns.1987.4337444
Conley, J. F., Lenahan, P. M., Roitman, P. (1992) Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trap. Applied Physics Letters, 60 (23). 2889-2891 doi:10.1063/1.106809
Warren, W. L., Lenahan, P. M. (1986) Electron spin resonance study of high field stressing in metal‐oxide‐silicon device oxides. Applied Physics Letters, 49 (19). 1296-1298 doi:10.1063/1.97391
Mikawa, R. E., Lenahan, P. M. (1985) Structural damage at the Si/SiO2interface resulting from electron injection in metal‐oxide‐semiconductor devices. Applied Physics Letters, 46 (6). 550-552 doi:10.1063/1.95534
Lenahan, P. M., Dressendorfer, P. V. (1984) Hole traps and trivalent silicon centers in metal/oxide/silicon devices. Journal of Applied Physics, 55 (10). 3495-3499 doi:10.1063/1.332937
Weimer, R. A., Lenahan, P. M., Marchione, T. A., Brinker, C. J. (1987) Electronic properties of sol‐gel‐derived oxides on silicon. Applied Physics Letters, 51 (15). 1179-1181 doi:10.1063/1.98725
Pribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
Anders, M. A., Lenahan, P. M., Lelis, A. J. (2016) Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?. Applied Physics Letters, 109 (14). 142106pp. doi:10.1063/1.4963708
Fleetwood, D. M., Shaneyfelt, M. R., Schwank, J. R. (1994) Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors. Applied Physics Letters, 64 (15). 1965-1967 doi:10.1063/1.111757
Avni, E., Shappir, J. (1987) Trap generation and occupation in stressed gate oxides under spatially variable oxide electric field. Applied Physics Letters, 51 (22). 1857-1859 doi:10.1063/1.98493
Buchwald, W. R., Johnson, N. M., Trombetta, L. P. (1987) New metastable defects in GaAs. Applied Physics Letters, 50 (15). 1007-1009 doi:10.1063/1.97990
 
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