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Pribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397

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Reference TypeJournal (article/letter/editorial)
TitleInterface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors
JournalApplied Physics Letters
AuthorsPribicko, T. G.Author
Campbell, J. P.Author
Lenahan, P. M.Author
Tsai, W.Author
Kerber, A.Author
Year2005 (April 25)Volume86
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.1919397Search in ResearchGate
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Mindat Ref. ID8542579Long-form Identifiermindat:1:5:8542579:6
GUID0
Full ReferencePribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
Plain TextPribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
In(2005, April) Applied Physics Letters Vol. 86 (17) AIP Publishing

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Anders, M. A., Lenahan, P. M., Lelis, A. J. (2016) Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?. Applied Physics Letters, 109 (14). 142106pp. doi:10.1063/1.4963708
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