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Cochrane, C. J., Lenahan, P. M., Campbell, J. P., Bersuker, G., Neugroschel, A. (2007) Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. Applied Physics Letters, 90 (12). 123502pp. doi:10.1063/1.2715141

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Reference TypeJournal (article/letter/editorial)
TitleObservation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
JournalApplied Physics Letters
AuthorsCochrane, C. J.Author
Lenahan, P. M.Author
Campbell, J. P.Author
Bersuker, G.Author
Neugroschel, A.Author
Year2007 (March 19)Volume90
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2715141Search in ResearchGate
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Mindat Ref. ID8553019Long-form Identifiermindat:1:5:8553019:5
GUID0
Full ReferenceCochrane, C. J., Lenahan, P. M., Campbell, J. P., Bersuker, G., Neugroschel, A. (2007) Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. Applied Physics Letters, 90 (12). 123502pp. doi:10.1063/1.2715141
Plain TextCochrane, C. J., Lenahan, P. M., Campbell, J. P., Bersuker, G., Neugroschel, A. (2007) Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination. Applied Physics Letters, 90 (12). 123502pp. doi:10.1063/1.2715141
In(2007, March) Applied Physics Letters Vol. 90 (12) AIP Publishing

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Cochrane, C. J., Lenahan, P. M. (2013) Detection of interfacial Pb centers in Si/SiO2 metal-oxide-semiconducting field-effect transistors via zero-field spin dependent recombination with observation of precursor pair spin-spin interactions. Applied Physics Letters, 103 (5). 53506pp. doi:10.1063/1.4817264
Meyer, David J., Lenahan, Patrick M., Lelis, Aivars J. (2005) Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination. Applied Physics Letters, 86 (2). 23503pp. doi:10.1063/1.1851592
Cochrane, C. J., Lenahan, P. M., Lelis, A. J. (2012) Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination. Applied Physics Letters, 100 (2). 23509pp. doi:10.1063/1.3675857
Ryan, J. T., Lenahan, P. M., Bersuker, G., Lysaght, P. (2007) Electron spin resonance observations of oxygen deficient silicon atoms in the interfacial layer of hafnium oxide based metal-oxide-silicon structures. Applied Physics Letters, 90 (17). 173513pp. doi:10.1063/1.2734478
Ryan, J. T., Lenahan, P. M., Robertson, J., Bersuker, G. (2008) Direct observation of electrically active interfacial layer defects which may cause threshold voltage instabilities in HfO2 based metal-oxide-silicon field-effect transistors. Applied Physics Letters, 92 (12). 123506pp. doi:10.1063/1.2902295
Pribicko, T. G., Campbell, J. P., Lenahan, P. M., Tsai, W., Kerber, A. (2005) Interface defects in Si∕HfO2-based metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 86 (17). 173511pp. doi:10.1063/1.1919397
Cochrane, C. J., Lenahan, P. M., Lelis, A. J. (2009) Direct observation of lifetime killing defects in 4H SiC epitaxial layers through spin dependent recombination in bipolar junction transistors. Journal of Applied Physics, 105 (6). 64502pp. doi:10.1063/1.3081644
Bittel, B. C., Lenahan, P. M., Ryan, J. T., Fronheiser, J., Lelis, A. J. (2011) Spin dependent charge pumping in SiC metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 99 (8). 83504pp. doi:10.1063/1.3630024
Cochrane, C. J., Lenahan, P. M., Lelis, A. J. (2013) The effect of nitric oxide anneals on silicon vacancies at and very near the interface of 4H SiC metal oxide semiconducting field effect transistors using electrically detected magnetic resonance. Applied Physics Letters, 102 (19). 193507pp. doi:10.1063/1.4805355
Anders, M. A., Lenahan, P. M., Lelis, A. J. (2016) Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?. Applied Physics Letters, 109 (14). 142106pp. doi:10.1063/1.4963708
Cochrane, C. J., Lenahan, P. M. (2012) Zero-field detection of spin dependent recombination with direct observation of electron nuclear hyperfine interactions in the absence of an oscillating electromagnetic field. Journal of Applied Physics, 112 (12). 123714pp. doi:10.1063/1.4770472
 
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