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Johnson, D. A., Myhajlenko, S., Edwards, J. L., Maracas, G. N., Roedel, R. J., Goronkin, H. (1987) Imaging of deep level domains in semi‐insulating GaAs by voltage contrast. Applied Physics Letters, 51 (15). 1152-1154 doi:10.1063/1.98768

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Reference TypeJournal (article/letter/editorial)
TitleImaging of deep level domains in semi‐insulating GaAs by voltage contrast
JournalApplied Physics Letters
AuthorsJohnson, D. A.Author
Myhajlenko, S.Author
Edwards, J. L.Author
Maracas, G. N.Author
Roedel, R. J.Author
Goronkin, H.Author
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98768Search in ResearchGate
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Mindat Ref. ID8481143Long-form Identifiermindat:1:5:8481143:7
GUID0
Full ReferenceJohnson, D. A., Myhajlenko, S., Edwards, J. L., Maracas, G. N., Roedel, R. J., Goronkin, H. (1987) Imaging of deep level domains in semi‐insulating GaAs by voltage contrast. Applied Physics Letters, 51 (15). 1152-1154 doi:10.1063/1.98768
Plain TextJohnson, D. A., Myhajlenko, S., Edwards, J. L., Maracas, G. N., Roedel, R. J., Goronkin, H. (1987) Imaging of deep level domains in semi‐insulating GaAs by voltage contrast. Applied Physics Letters, 51 (15). 1152-1154 doi:10.1063/1.98768
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

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Maracas, G. N., Johnson, D. A., Goronkin, H. (1985) Experimental evaluation of low‐frequency oscillations in undoped GaAs to probe deep level parameters. Applied Physics Letters, 46 (3). 305-307 doi:10.1063/1.95667
Puechner, R. A., Johnson, D. A., Maracas, G. N. (1988) Trends of deep level electron traps in AlxGa1−xAs grown by molecular beam epitaxy. Applied Physics Letters, 53 (20). 1952-1954 doi:10.1063/1.100333
Johnson, E. J., Kafalas, J. A., Davies, R. W. (1983) The role of deep‐level centers and compensation in producing semi‐insulating GaAs. Journal of Applied Physics, 54 (1). 204-207 doi:10.1063/1.331742
Johnson, D. A., Puechner, R. A., Maracas, G. N. (1990) Thermal and spectral dependence of low‐frequency oscillations in semi‐insulating GaAs:In. Journal of Applied Physics, 67 (1). 300-306 doi:10.1063/1.345252
Radhakrishnan, J. K., Salviati, G. (2004) Narrow, deep level cathodoluminescence emission from semi-insulating GaAs. Applied Physics Letters, 84 (2). 197-199 doi:10.1063/1.1640471
Alt, H. Ch., Neef, M., von Philipsborn, H. (1989) Contrast phenomena of band‐band and deep level photoluminescence topographs in annealed semi‐insulating GaAs. Applied Physics Letters, 55 (19). 1972-1974 doi:10.1063/1.102136
Queisser, Hans J. (1985) Reversal of contrast for infrared absorption of deep levels in semi‐insulating GaAs. Applied Physics Letters, 46 (8). 757-759 doi:10.1063/1.95498
Maracas, G.N., Porod, W., Johnson, D.A., Ferry, D.K., Goronkin, H. (1985) Low-frequency oscillations and routes to chaos in semi-insulating GaAs. Physica B+C, 134 (1). 276-280 doi:10.1016/0378-4363(85)90355-9
Shen, J., Tehrani, S., Goronkin, H., Droopad, R., Maracas, G. (1992) Quantum well thickness effect on the deep–shallow duality of Si in AlGaAs/InGaAs heterostructures. Journal of Applied Physics, 71 (12). 5985-5988 doi:10.1063/1.350451
Johnson, E. J., Kafalas, J., Davies, R. W., Dyes, W. A. (1982) Deep center EL2 and anti‐Stokes luminescence in semi‐insulating GaAs. Applied Physics Letters, 40 (11). 993-995 doi:10.1063/1.92954
Matsui, Masayoshi, Kazuno, Tadao (1987) Abnormal outdiffusion behavior of the deep level EL2 at the surface layer of undoped semi‐insulating GaAs. Applied Physics Letters, 51 (9). 658-660 doi:10.1063/1.98325
 
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