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Wen, D. S., Smith, P. L., Osburn, C. M., Rozgonyi, G. A. (1987) Defect annihilation in shallowp+junctions using titanium silicide. Applied Physics Letters, 51 (15). 1182-1184 doi:10.1063/1.98726

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Reference TypeJournal (article/letter/editorial)
TitleDefect annihilation in shallowp+junctions using titanium silicide
JournalApplied Physics Letters
AuthorsWen, D. S.Author
Smith, P. L.Author
Osburn, C. M.Author
Rozgonyi, G. A.Author
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98726Search in ResearchGate
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Mindat Ref. ID8481112Long-form Identifiermindat:1:5:8481112:7
GUID0
Full ReferenceWen, D. S., Smith, P. L., Osburn, C. M., Rozgonyi, G. A. (1987) Defect annihilation in shallowp+junctions using titanium silicide. Applied Physics Letters, 51 (15). 1182-1184 doi:10.1063/1.98726
Plain TextWen, D. S., Smith, P. L., Osburn, C. M., Rozgonyi, G. A. (1987) Defect annihilation in shallowp+junctions using titanium silicide. Applied Physics Letters, 51 (15). 1182-1184 doi:10.1063/1.98726
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

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Kyllesbech Larsen, K., La Via, F., Lombardo, S., Raineri, V., Campisano, S. U. (1995) Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide. Applied Physics Letters, 67 (20). 2931-2933 doi:10.1063/1.114846
Wang, Kou‐Wei (1987) Formation of a shallowp+layer on InP using a P/Be co‐implant. Applied Physics Letters, 51 (25). 2127-2129 doi:10.1063/1.98968
Hu, S. M. (1987) Point defect generation and enhanced diffusion in silicon due to tantalum silicide overlays. Applied Physics Letters, 51 (5). 308-310 doi:10.1063/1.98452
Mei, P., Jalali, B., Yang, E. S., Stoffel, N. G., Hart, D. L. (1990) Electrical and structural properties of shallowp+junctions formed by dual (Ga/B) ion implantation. Applied Physics Letters, 56 (14). 1362-1364 doi:10.1063/1.102515
Ozguz, V. H., Wortman, J. J., Hauser, J. R., Simpson, L., Littlejohn, M. A., Chu, W. K., Rozgonyi, G. A. (1984) Electrical properties of implanted and rapid thermal annealed shallowp+‐njunctions. Applied Physics Letters, 45 (11). 1225-1226 doi:10.1063/1.95106
Lee, H. C., Hariz, A., Dapkus, P. D., Kost, A., Kawase, M., Garmire, E. (1987) Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (17). 1182-1184 doi:10.1063/1.97904
Niquet, Y. M., Allan, G., Delerue, C., Lannoo, M. (2000) Quantum confinement in germanium nanocrystals. Applied Physics Letters, 77 (8). 1182-1184 doi:10.1063/1.1289659
Song, L. W., Benson, B. W., Watkins, G. D. (1987) Identification of a bistable defect in silicon: The carbon interstitial‐carbon substitutional pair. Applied Physics Letters, 51 (15). 1155-1157 doi:10.1063/1.98717
Capio, C. D., Williams, D. S., Murarka, S. P. (1987) Silicide formation with codeposited titanium‐tantalum alloys on silicon. Journal of Applied Physics, 62 (4). 1257-1264 doi:10.1063/1.339678
Cohen, S. S., Piacente, P. A., Gildenblat, G., Brown, D. M. (1982) Platinum silicide ohmic contacts to shallow junctions in silicon. Journal of Applied Physics, 53 (12). 8856-8862 doi:10.1063/1.330439
Chow, T. P., Katz, W., Smith, G. (1985) Titanium silicide formation on BF+2‐implanted silicon. Applied Physics Letters, 46 (1). 41-43 doi:10.1063/1.95844
 
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