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Adachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719

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Reference TypeJournal (article/letter/editorial)
TitleDual implantation of Be+and F+in GaAs and AlxGa1−xAs
JournalApplied Physics Letters
AuthorsAdachi, SadaoAuthor
Year1987 (October 12)Volume51
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.98719Search in ResearchGate
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Mindat Ref. ID8481098Long-form Identifiermindat:1:5:8481098:8
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Full ReferenceAdachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719
Plain TextAdachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719
In(1987, October) Applied Physics Letters Vol. 51 (15) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Adachi, Sadao (1988) Si‐ion implantation in GaAs and AlxGa1−xAs. Journal of Applied Physics, 63 (1). 64-67 doi:10.1063/1.341157
Yamahata, Shoji, Adachi, Sadao (1988) Be+/P+and Be+/As+dual implantations into AlxGa1−xAs. Applied Physics Letters, 52 (18). 1493-1495 doi:10.1063/1.99109
Adachi, Sadao, Yamahata, Shoji (1988) Dual‐species ion implantation in AlxGa1−xAs. Journal of Applied Physics, 64 (6). 3312-3314 doi:10.1063/1.341508
Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1986) Be‐ion implantation in AlxGa1−xAs. Journal of Applied Physics, 60 (8). 2814-2819 doi:10.1063/1.337063
Adachi, Sadao, Yamahata, Shoji (1987) Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1265-1267 doi:10.1063/1.98700
Adachi, Sadao (1985) GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications. Journal of Applied Physics, 58 (3). doi:10.1063/1.336070
Adachi, Sadao (1986) Be+/O+‐ion implantation in GaAs–AlGaAs heterojunctions. Journal of Applied Physics, 60 (3). 959-964 doi:10.1063/1.337337
Adachi, Sadao (1989) Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y. Journal of Applied Physics, 66 (12). 6030-6040 doi:10.1063/1.343580
Chen, H. Z., Wang, H., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Measurement of Au/GaAs/AlxGa1−xAs hetero‐Schottky barrier height and GaAs/AlxGa1−xAs conduction‐band discontinuity. Applied Physics Letters, 51 (13). 990-991 doi:10.1063/1.98785
Hiroshima, Tohya (1987) Electric field induced refractive index changes in GaAs‐AlxGa1−xAs quantum wells. Applied Physics Letters, 50 (15). 968-970 doi:10.1063/1.98001
Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1987) Electrical properties of Be+ion‐implanted AlxGa1−xAsp‐njunctions. Journal of Applied Physics, 62 (7). 3042-3046 doi:10.1063/1.339366
 
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