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Yamahata, Shoji, Adachi, Sadao (1988) Be+/P+and Be+/As+dual implantations into AlxGa1−xAs. Applied Physics Letters, 52 (18). 1493-1495 doi:10.1063/1.99109

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Reference TypeJournal (article/letter/editorial)
TitleBe+/P+and Be+/As+dual implantations into AlxGa1−xAs
JournalApplied Physics Letters
AuthorsYamahata, ShojiAuthor
Adachi, SadaoAuthor
Year1988 (May 2)Volume52
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.99109Search in ResearchGate
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Mindat Ref. ID8482924Long-form Identifiermindat:1:5:8482924:1
GUID0
Full ReferenceYamahata, Shoji, Adachi, Sadao (1988) Be+/P+and Be+/As+dual implantations into AlxGa1−xAs. Applied Physics Letters, 52 (18). 1493-1495 doi:10.1063/1.99109
Plain TextYamahata, Shoji, Adachi, Sadao (1988) Be+/P+and Be+/As+dual implantations into AlxGa1−xAs. Applied Physics Letters, 52 (18). 1493-1495 doi:10.1063/1.99109
In(1988, May) Applied Physics Letters Vol. 52 (18) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1986) Be‐ion implantation in AlxGa1−xAs. Journal of Applied Physics, 60 (8). 2814-2819 doi:10.1063/1.337063
Adachi, Sadao, Yamahata, Shoji (1988) Dual‐species ion implantation in AlxGa1−xAs. Journal of Applied Physics, 64 (6). 3312-3314 doi:10.1063/1.341508
Adachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719
Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1987) Electrical properties of Be+ion‐implanted AlxGa1−xAsp‐njunctions. Journal of Applied Physics, 62 (7). 3042-3046 doi:10.1063/1.339366
Adachi, Sadao, Yamahata, Shoji (1987) Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1265-1267 doi:10.1063/1.98700
Adachi, Sadao (1988) Si‐ion implantation in GaAs and AlxGa1−xAs. Journal of Applied Physics, 63 (1). 64-67 doi:10.1063/1.341157
Adachi, Sadao (1985) GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications. Journal of Applied Physics, 58 (3). doi:10.1063/1.336070
Adachi, Sadao (1989) Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1−xAs, and In1−xGaxAsyP1−y. Journal of Applied Physics, 66 (12). 6030-6040 doi:10.1063/1.343580
Lee, Cynthia C., Deal, Michael D., Bravman, John C. (1995) Diffusion of implanted Be in AlxGa1−xAs as a function of Al concentration and anneal temperature. Applied Physics Letters, 66 (3). 355-357 doi:10.1063/1.114211
Adachi, Sadao (1986) Be+/O+‐ion implantation in GaAs–AlGaAs heterojunctions. Journal of Applied Physics, 60 (3). 959-964 doi:10.1063/1.337337
Fujita, Shigeo, Bedair, S.M., Littlejohn, M.A., Hauser, J.R. (1980) Doping characteristics and electrical properties of Be-doped p-type AlxGa1−xAs by liquid phase epitaxy. Journal of Applied Physics, 51 (10). 5438pp. doi:10.1063/1.327499
 
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