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Adachi, Sadao, Yamahata, Shoji (1987) Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1265-1267 doi:10.1063/1.98700

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Reference TypeJournal (article/letter/editorial)
TitleThermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsAdachi, SadaoAuthor
Yamahata, ShojiAuthor
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98700Search in ResearchGate
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Mindat Ref. ID8481162Long-form Identifiermindat:1:5:8481162:2
GUID0
Full ReferenceAdachi, Sadao, Yamahata, Shoji (1987) Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1265-1267 doi:10.1063/1.98700
Plain TextAdachi, Sadao, Yamahata, Shoji (1987) Thermal conversion of AlxGa1−xAs layers grown by molecular beam epitaxy. Applied Physics Letters, 51 (16). 1265-1267 doi:10.1063/1.98700
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

See Also

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Yamahata, Shoji, Adachi, Sadao (1988) Be+/P+and Be+/As+dual implantations into AlxGa1−xAs. Applied Physics Letters, 52 (18). 1493-1495 doi:10.1063/1.99109
Adachi, Sadao, Yamahata, Shoji (1988) Dual‐species ion implantation in AlxGa1−xAs. Journal of Applied Physics, 64 (6). 3312-3314 doi:10.1063/1.341508
Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1986) Be‐ion implantation in AlxGa1−xAs. Journal of Applied Physics, 60 (8). 2814-2819 doi:10.1063/1.337063
Yamahata, Shoji, Adachi, Sadao, Ishibashi, Tadao (1987) Electrical properties of Be+ion‐implanted AlxGa1−xAsp‐njunctions. Journal of Applied Physics, 62 (7). 3042-3046 doi:10.1063/1.339366
Adachi, Sadao (1987) Dual implantation of Be+and F+in GaAs and AlxGa1−xAs. Applied Physics Letters, 51 (15). 1161-1163 doi:10.1063/1.98719
Merz, J. L., Cho, A. Y. (1976) Low‐loss AlxGa1−xAs waveguides grown by molecular beam epitaxy. Applied Physics Letters, 28 (8). 456-458 doi:10.1063/1.88797
Basmaji, P. (1991) Selenium‐DXcenter‐doped AlxGa1−xAs grown by molecular beam epitaxy. Journal of Applied Physics, 70 (5). 2866-2867 doi:10.1063/1.349350
Morkoç, Hadis, Cho, A. Y., Radice, C. (1980) Transport properties of Sn‐doped AlxGa1−xAs grown by molecular beam epitaxy. Journal of Applied Physics, 51 (9). 4882-4884 doi:10.1063/1.328324
Miller, Robert C., Tsang, Won T. (1981) Al‐Ga disorder in AlxGa1−xAs alloys grown by molecular beam epitaxy. Applied Physics Letters, 39 (4). 334-335 doi:10.1063/1.92712
Ono, Haruhiko, Furuhata, Naoki (1991) Vibrational modes of carbon‐aluminum complexes in AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 59 (15). 1881-1883 doi:10.1063/1.106176
Tsang, W. T. (1980) Infrared‐visible (0.89–0.72 μm) AlxGa1−xAs/AlyGa1−yAs double‐heterostructure lasers grown by molecular beam epitaxy. Journal of Applied Physics, 51 (2). 917-919 doi:10.1063/1.327668
 
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