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Jagannath, C., Zemon, S., Norris, P., Elman, B. S. (1987) Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates. Applied Physics Letters, 51 (16). 1268-1270 doi:10.1063/1.98701

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Reference TypeJournal (article/letter/editorial)
TitleBiaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates
JournalApplied Physics Letters
AuthorsJagannath, C.Author
Zemon, S.Author
Norris, P.Author
Elman, B. S.Author
Year1987 (October 19)Volume51
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.98701Search in ResearchGate
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Mindat Ref. ID8481164Long-form Identifiermindat:1:5:8481164:0
GUID0
Full ReferenceJagannath, C., Zemon, S., Norris, P., Elman, B. S. (1987) Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates. Applied Physics Letters, 51 (16). 1268-1270 doi:10.1063/1.98701
Plain TextJagannath, C., Zemon, S., Norris, P., Elman, B. S. (1987) Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates. Applied Physics Letters, 51 (16). 1268-1270 doi:10.1063/1.98701
In(1987, October) Applied Physics Letters Vol. 51 (16) AIP Publishing

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Yacobi, B. G., Zemon, S., Norris, P., Jagannath, C., Sheldon, P. (1987) Stress variations due to microcracks in GaAs grown on Si. Applied Physics Letters, 51 (26). 2236-2238 doi:10.1063/1.98951
Elman, B., Koteles, Emil S., Melman, P., Jagannath, C., Lee, Johnson, Dugger, D. (1989) Insitumeasurements of critical layer thickness and optical studies of InGaAs quantum wells grown on GaAs substrates. Applied Physics Letters, 55 (16). 1659-1661 doi:10.1063/1.102279
Yacobi, B. G., Jagannath, C., Zemon, S., Sheldon, P. (1988) Stress variations and relief in patterned GaAs grown on mismatched substrates. Applied Physics Letters, 52 (7). 555-557 doi:10.1063/1.99415
Zemon, S., Jagannath, C., Shastry, S. K., Miniscalco, W. J., Lambert, G. (1988) Resonant photoluminescence excitation in GaAs grown directly on Si. Applied Physics Letters, 53 (3). 213-215 doi:10.1063/1.100134
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
Elman, B., Koteles, Emil S., Melman, P., Jagannath, C., Armiento, C. A., Rothman, M. (1990) Effect of heat treatment on InGaAs/GaAs quantum wells. Journal of Applied Physics, 68 (3). 1351-1353 doi:10.1063/1.346680
Goodnick, S. M., Lugli, P. (1987) Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells. Applied Physics Letters, 51 (8). 584-586 doi:10.1063/1.98355
Melman, P., Elman, B., Jagannath, C., Koteles, Emil S., Silletti, A., Dugger, D. (1989) InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature. Applied Physics Letters, 55 (14). 1436-1438 doi:10.1063/1.101579
Mii, Y. J., Karunasiri, R. P. G., Wang, K. L. (1988) Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates. Applied Physics Letters, 53 (21). 2050-2052 doi:10.1063/1.100316
Wentink, D. J., Dawson, P., Foxon, C. T. (1993) Anisotropic excitation spectra of GaAs/AlGaAs quantum wells grown on vicinal plane substrates. Applied Physics Letters, 63 (9). 1261-1263 doi:10.1063/1.109762
Dobbelaere, W., Huang, D., Ünlü, M. S., Morkoç, H. (1988) AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates. Applied Physics Letters, 53 (2). 94-96 doi:10.1063/1.100359
 
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