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Severi, Maurizio, Impronta, Maurizio (1987) Charge trapping in thin nitrided SiO2films. Applied Physics Letters, 51 (21). 1702-1704 doi:10.1063/1.98549

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Reference TypeJournal (article/letter/editorial)
TitleCharge trapping in thin nitrided SiO2films
JournalApplied Physics Letters
AuthorsSeveri, MaurizioAuthor
Impronta, MaurizioAuthor
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98549Search in ResearchGate
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Mindat Ref. ID8481552Long-form Identifiermindat:1:5:8481552:1
GUID0
Full ReferenceSeveri, Maurizio, Impronta, Maurizio (1987) Charge trapping in thin nitrided SiO2films. Applied Physics Letters, 51 (21). 1702-1704 doi:10.1063/1.98549
Plain TextSeveri, Maurizio, Impronta, Maurizio (1987) Charge trapping in thin nitrided SiO2films. Applied Physics Letters, 51 (21). 1702-1704 doi:10.1063/1.98549
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

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Lim, P. S., Chim, W. K. (2000) Anomalous positive charge trapping in thin nitrided oxides under high-field impulse stressing. Applied Physics Letters, 77 (17). 2719-2721 doi:10.1063/1.1320041
Vellianitis, G., Rittersma, Z. M., PĆ©try, J. (2006) Charge trapping in nitrided HfSiO gate dielectric layers. Applied Physics Letters, 89 (9). 92902pp. doi:10.1063/1.2339049
DiMaria, D. J., Ghez, R., Dong, D. W. (1980) Charge trapping studies in SiO2using high current injection from Siā€rich SiO2films. Journal of Applied Physics, 51 (9). 4830-4841 doi:10.1063/1.328317
Porfiri, Maurizio (2008) Charge dynamics in ionic polymer metal composites. Journal of Applied Physics, 104 (10). 104915pp. doi:10.1063/1.3017467
Krisch, K. S., Gross, B. J., Sodini, C. G. (1991) Positiveā€charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics. Journal of Applied Physics, 70 (4). 2185-2194 doi:10.1063/1.349457
Greco, Giuseppe, Fiorenza, Patrick, Giannazzo, Filippo, Bongiorno, Corrado, Moschetti, Maurizio, Bottari, Cettina, Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio (2022) Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs. Applied Physics Letters, 121 (23) 233506 doi:10.1063/5.0122097
Shatzkes, Morris, Avā€Ron, Moshe (1976) Impact ionization and positive charge in thin SiO2films. Journal of Applied Physics, 47 (7). 3192-3202 doi:10.1063/1.323115
Han, C. J., Moslehi, M. M., Helms, C. R., Saraswat, K. C. (1985) Timeā€dependent compositional variation in SiO2films nitrided in ammonia. Applied Physics Letters, 46 (7). 641-643 doi:10.1063/1.95513
Huang, X. D., Lai, P. T., Liu, L., Xu, J. P. (2011) Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications. Applied Physics Letters, 98 (24). 242905pp. doi:10.1063/1.3601473
Hofmann, K., Young, D. R., Rubloff, G. W. (1987) Hole trapping in SiO2films annealed in lowā€pressure oxygen atmosphere. Journal of Applied Physics, 62 (3). 925-930 doi:10.1063/1.339702
Wacker, A., Schƶll, E. (1991) Oscillatory instability in the heterostructure hotā€electron diode. Applied Physics Letters, 59 (14). 1702-1704 doi:10.1063/1.106223
 
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