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Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 52 (16). 1329-1331 doi:10.1063/1.99149

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Reference TypeJournal (article/letter/editorial)
TitleShort‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures
JournalApplied Physics Letters
AuthorsNam, D. W.Author
Deppe, D. G.Author
Holonyak, N.Author
Fletcher, R. M.Author
Kuo, C. P.Author
Osentowski, T. D.Author
Craford, M. G.Author
Year1988 (April 18)Volume52
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99149Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8482794Long-form Identifiermindat:1:5:8482794:2
GUID0
Full ReferenceNam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 52 (16). 1329-1331 doi:10.1063/1.99149
Plain TextNam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 52 (16). 1329-1331 doi:10.1063/1.99149
In(1988, April) Applied Physics Letters Vol. 52 (16) AIP Publishing

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Dallesasse, J. M., Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (≲6400 Å) room‐temperature continuous operation ofp‐nIn0.5(AlxGa1−x)0.5P quantum well lasers. Applied Physics Letters, 53 (19). 1826-1828 doi:10.1063/1.100388
Nam, D. W., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1989) Photopumped phonon‐assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 54 (24). 2446-2448 doi:10.1063/1.101067
Dallesasse, J. M., El‐Zein, N., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1990) Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers. Journal of Applied Physics, 68 (11). 5871-5873 doi:10.1063/1.346962
Dallesasse, J. M., Plano, W. E., Nam, D. W., Hsieh, K. C., Baker, J. E., Holonyak, N., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1989) Impurity‐induced layer disordering in In0.5(AlxGa1−x)0.5P‐InGaP quantum‐well heterostructures: Visible‐spectrum‐buried heterostructure lasers. Journal of Applied Physics, 66 (2). 482-487 doi:10.1063/1.343562
Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters, 52 (17). 1413-1415 doi:10.1063/1.99132
Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Sugg, A. R., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1991) Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes. Applied Physics Letters, 59 (3). 354-356 doi:10.1063/1.105593
Kish, F. A., Caracci, S. J., Maranowski, S. A., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1992) Planar native‐oxide buried‐mesa AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5(AlzGa1−z)0.5P visible‐spectrum laser diodes. Journal of Applied Physics, 71 (6). 2521-2525 doi:10.1063/1.351067
Kuo, C.P., Fletcher, R.M., Osentowski, T.D., Craford, M.G., Nam, D.W., Holonyak, N., Hsieh, K.C., Fouquet, J.E. (1988) Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures. Journal of Crystal Growth, 93 (1). 389-395 doi:10.1016/0022-0248(88)90558-1
Deppe, D. G., Plano, W. E., Baker, J. E., Holonyak, N., Ludowise, M. J., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Comparison of SiIII‐SiVand SiIII‐VIIIdiffusion models in III‐V heterostructures lattice matched to GaAs. Applied Physics Letters, 53 (22). 2211-2213 doi:10.1063/1.100284
Nam, D. W., Holonyak, N., Hsieh, K. C., Kaliski, R. W., Lee, J. W., Shichijo, H., Epler, J. E., Burnham, R. D., Paoli, T. L. (1987) Stable continuous room‐temperature laser operation of AlxGa1−xAs‐GaAs quantum well heterostructures grown on Si. Applied Physics Letters, 51 (1). 39-41 doi:10.1063/1.98879
Maranowski, S. A., Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Bour, D. P., Treat, D. W. (1992) Native‐oxide defined In0.5(AlxGa1−x)0.5P quantum well heterostructure window lasers (660 nm). Applied Physics Letters, 61 (14). 1688-1690 doi:10.1063/1.108452
 
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